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Low Volume Resistivity Chemical Vapor Deposited Boron Doped Polycrystalline Thin Diamond Film Growth on Sapphire

Published online by Cambridge University Press:  15 February 2011

Hassan Golestanian ,
S. Mirzakuchaki ,
E. J. Charlson ,
T. Stacy  and
E. M. Charlson
Hassan Golestanian
Affiliation:
University of Missouri-Columbia, Department of Electrical Engineering, Columbia, MO 65211
S. Mirzakuchaki
Affiliation:
University of Missouri-Columbia, Department of Electrical Engineering, Columbia, MO 65211
E. J. Charlson
Affiliation:
University of Missouri-Columbia, Department of Electrical Engineering, Columbia, MO 65211
T. Stacy
Affiliation:
University of Missouri-Columbia, Department of Electrical Engineering, Columbia, MO 65211
E. M. Charlson
Affiliation:
University of Missouri-Columbia, Department of Electrical Engineering, Columbia, MO 65211
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Abstract

Hot-filament chemical vapor deposited (HFCVD) boron doped polycrystalline diamond thin films having low volume resistivity were grown on sapphire. The films were characterized using scanning electron microscope (SEM), X-ray diffraction, and current-voltage measurements. SEM micrographs show good crystalline structure with preferred (100) orientation normal to the surface of the film. X-ray diffraction pattern revealed diamond characteristics with the four typical diamond peaks present. Finally, the obtained I-V characteristics indicated that the film's volume resistivity is at least two orders of magnitude lower than those of HFCVD polycrystalline diamond thin films grown on silicon under similar growth conditions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 423: Symposium E – III-Nitride, SiC, and Diamond Materials for Electronic , 1996 , 589
Copyright
Copyright © Materials Research Society 1996

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References

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