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Low Resistivity Boron Doped Amorphous Silicon-Germanium Alloy Films Obtained with a Low Frequency

Published online by Cambridge University Press:  01 February 2011

Plasma A. Heredia-J ,
A. Torres-J ,
F.J. De la Hidalga-W ,
A. Jaramillo-N ,
J. Sanchez-M ,
C. Zúñiga-I ,
M. Basurto P  and
A. Pérez
Plasma A. Heredia-J
Affiliation:
Optics and Instituto Nacional de Astrofísica, Óptica y Electrónica, INAOE Luis E. Erro # 1, CP 72840, Tonantzintla, Puebla, México
A. Torres-J
Affiliation:
Electronics Departments, Instituto Nacional de Astrofísica, Óptica y Electrónica, INAOE Luis E. Erro # 1, CP 72840, Tonantzintla, Puebla, México
F.J. De la Hidalga-W
Affiliation:
Electronics Departments, Instituto Nacional de Astrofísica, Óptica y Electrónica, INAOE Luis E. Erro # 1, CP 72840, Tonantzintla, Puebla, México
A. Jaramillo-N
Affiliation:
Optics and Instituto Nacional de Astrofísica, Óptica y Electrónica, INAOE Luis E. Erro # 1, CP 72840, Tonantzintla, Puebla, México
J. Sanchez-M
Affiliation:
Uversidad Autónoma del Estado de Morelos, UAEM Cuernavaca, Morelos, México, aheredia@susu.inaoep.mx
C. Zúñiga-I
Affiliation:
Electronics Departments, Instituto Nacional de Astrofísica, Óptica y Electrónica, INAOE Luis E. Erro # 1, CP 72840, Tonantzintla, Puebla, México
M. Basurto P
Affiliation:
Uversidad Autónoma del Estado de Morelos, UAEM Cuernavaca, Morelos, México, aheredia@susu.inaoep.mx
A. Pérez
Affiliation:
Optics and Instituto Nacional de Astrofísica, Óptica y Electrónica, INAOE Luis E. Erro # 1, CP 72840, Tonantzintla, Puebla, México
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Abstract

The structural and electrical properties of boron doped amorphous silicon-germanium alloy films, obtained using a low frequency plasma enhanced chemical vapor deposition (LF PECVD), are presented in this contribution. These thin films were deposited on a substrate heated at 270°C, and by decomposing a mixture of silane, germane, and diborane gases. The chemical bond structure was studied by Infrared Spectroscopy. Our results show that, for a constant diborane flow, the increase of germane flow enhances the incorporation of boron into the film; the peak at 2540 cm−1 becomes larger as the Ge content increases. Transport of carriers was studied by measuring current-voltage curves as a function of temperature. The conductivity increased from 10−6 to 10 (Ω-cm)−1, while the refraction index increased from 3.312 to 4.4458, for an increasing Ge content; this makes the films suitable for optical waveguide applications. On the other hand, the activation energy varied from 0.668 to 0.220 eV when the sample was doped with boron. The AFM images showed that the surface roughness was improved for an alloy with 50% of Ge.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 796: Symposium V – Critical Interfacial Issues in Thin Film Optoelectronic and Energy Conversion Devices , 2003 , V2.4
Copyright
Copyright © Materials Research Society 2004

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References

REFERENCES

1. Bermejo, D. and Cardona, M., J. Non-Cryst. Solids, Vol. 32, pp. 421–430, 1979.Google Scholar
2. Ambrocio, R., Torres, A., Kozarev, A., Ilinski, A., Zuñiga, C., Abramov, A. S., presented in ICAMS 20 conference, Brasil, August 25–29/2003. To be published in Journal of Non Crystalline Solids.Google Scholar
3. Chou, Y. and Chen, L, J. Appl. Phys. Vol. 83, (8), pp. 4111–4123, 1998.Google Scholar
4. Kanicki, Jerzy, Amorphous and Microcrystalline Semiconductor Devices Vol. II, Artech House, 1992.Google Scholar
5. Shimizu, Tatsuo, Optoelectronics-Devices and Technologies, Vol. 9, pp. 277–298, 1994.Google Scholar
6. Chapman, B.D. and Han, S. W., Seidler, G.T, Stern, E. A., David Cohen, J., Guha, S. and Yang, J.., Journal of Applied Physics, Vol. 92, pp. 801–807, 2002.Google Scholar
7. Mackenzie, K. D., Eggert, J. R., Leopold, D. J., Li, Y. M., Lin, S. and Paul, William. Physical Review B, Vol. 31, pp. 2198–2212, 1985.Google Scholar
8. Tsai, C. C., Physical Review B, Vol. 19, pp. 2044–2054, 1979.Google Scholar