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Low Energy Ion Irradiation Effect on Electron Transport in Gaas/Algaas Heterostructures

Published online by Cambridge University Press:  21 February 2011

J. Yanagisawa ,
A. Nozawa ,
Y. Yuba ,
S. Takaoka ,
K. Murase  and
K. Gamo
J. Yanagisawa
Affiliation:
Department of Electrical Engineering, Faculty of Engineering Science, Osaka University, Toyonaka, Osaka 560, Japan
A. Nozawa
Affiliation:
Department of Electrical Engineering, Faculty of Engineering Science, Osaka University, Toyonaka, Osaka 560, Japan
Y. Yuba
Affiliation:
Department of Electrical Engineering, Faculty of Engineering Science, Osaka University, Toyonaka, Osaka 560, Japan
S. Takaoka
Affiliation:
Department of Physics, Faculty of Science, Osaka University, Toyonaka, Osaka 560, Japan
K. Murase
Affiliation:
Department of Physics, Faculty of Science, Osaka University, Toyonaka, Osaka 560, Japan Research Center for Extreme Materials, Osaka University, Toyonaka, Osaka 560, Japan
K. Gamo
Affiliation:
Department of Electrical Engineering, Faculty of Engineering Science, Osaka University, Toyonaka, Osaka 560, Japan Research Center for Extreme Materials, Osaka University, Toyonaka, Osaka 560, Japan
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Abstract

Effects of low energy ion beam induced damages on transport properties of a two-dimensional electron gas (2DEG) system in GaAs/AlGaAs heterostructures have been investigated. 1 keV Ar ions were irradiated on the sample surface at several ion doses (1011 - 1013 cm-2). Carrier density and electron mobility of the 2DEG formed at about 90 nm below the GaAs/AlGaAs heterostructure surface were estimated at 1.5 K by Hall resistance and longitudinal resistance measurements before and after annealing at 400°C for 10 min in an Ar gas ambient. The temperature dependence of those values was also measured for as-grown and for 1013 cm-2 ion irradiated and subsequently annealed samples. Typical results show that carrier density and mobility are not degraded severely by Ar ion irradiation at doses of 1013 cm-2 and suggest the possibility to fabricate buried structures in GaAs/AlGaAs heterostructures using low energy Si focused ion beam (FIB) irradiation and subsequent in situ overlayer growth by MBE.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 354: Symposium A – Beam Solid Interactions for Materials Synthesis and Characterization , 1994 , 165
Copyright
Copyright © Materials Research Society 1995

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