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Low Dielectric Constant Sicoh Films As Potential Candidates for Interconnect Dielectrics

Published online by Cambridge University Press:  10 February 2011

A. Grill ,
L. Perraud ,
V. Patel ,
C. Jahnes  and
S. Cohen
A. Grill
Affiliation:
IBM Research Division, T.J.Watson Research Center, Yorktown Heights, NY 10598
L. Perraud
Affiliation:
IBM Research Division, T.J.Watson Research Center, Yorktown Heights, NY 10598
V. Patel
Affiliation:
IBM Research Division, T.J.Watson Research Center, Yorktown Heights, NY 10598
C. Jahnes
Affiliation:
IBM Research Division, T.J.Watson Research Center, Yorktown Heights, NY 10598
S. Cohen
Affiliation:
IBM Research Division, T.J.Watson Research Center, Yorktown Heights, NY 10598
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Abstract

The quest to improve the high performance in ULSI circuits, is driving the search for new materials with low dielectric constants (k=2.5–3.0) for the back end of the line (BEOL) interconnect structures. Novel SiCOH films comprising Si, C, O and H, have been deposited by a PECVD deposition technique. The films have been characterized as-deposited and after anneals of up to 8 hours at 400°C. The atomic composition of the films has been determined by RBS and FRES analysis and their optical properties have been determined by FTIR and index of refraction measurements. The mechanical properties have been determined by measurements of stress and of crack development velocity in water. Metal insulator silicon structures have been used to test the electrical properties of the SiCOH films. After an initial stabilization anneal, the SiCOH films are thermally stable up to 400°C have low tensile stresses (<50 MPa), an extremely low crack propagation velocity, and a hydrophobic behavior. According to the deposition conditions the films have dielectric constants in the range of 2.8 to 3.5. These film properties, combined with an easy-to-integrate deposition process indicate that the material has a strong potential as an interconnect dielectric.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 565: Symposium O – Low-Dielectric Constant Materials V , 1999 , 107
Copyright
Copyright © Materials Research Society 1999

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