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Low Damage Magnetron Reactive Ion Etching of GaAs

Published online by Cambridge University Press:  26 February 2011

G. Mclane ,
M. Meyyappan ,
M. W. Cole ,
H. S. Lee ,
R. Lareau ,
M. Namaroff  and
J. Sasserath
G. Mclane
Affiliation:
U. S. Army Electronics Technology and Devices Laboratory, Fort Monmouth, NJ 07703
M. Meyyappan
Affiliation:
Scientific Research Associates, Inc., Glastonbury, CT 06033
M. W. Cole
Affiliation:
U. S. Army Electronics Technology and Devices Laboratory, Fort Monmouth, NJ 07703
H. S. Lee
Affiliation:
U. S. Army Electronics Technology and Devices Laboratory, Fort Monmouth, NJ 07703
R. Lareau
Affiliation:
U. S. Army Electronics Technology and Devices Laboratory, Fort Monmouth, NJ 07703
M. Namaroff
Affiliation:
Materials Research Corporation, Orangeburg, NY 10962
J. Sasserath
Affiliation:
Materials Research Corporation, Orangeburg, NY 10962
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Abstract

Magnetron reactive ion etching is an attractive alternative to reactive ion etching since it has the potential for producing minimal surface damage while still retaining the advantages of reactive ion etching. We report here the results of a study of GaAs magnetron ion etching using Freon-12 and silicon tetrachloride etch gases. Differences are found in etch profiles and surface region characteristics of GaAs samples etched by the two gases. The relevant mechanisms are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 240: Symposium E – Advanced III-V Compound Semiconductor Growth, Processing and Devices , 1991 , 323
Copyright
Copyright © Materials Research Society 1992

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References

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