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Liquid Phase Growth of Epitaxial Ni and Co Silicides by Pulsed Laser Irradiation
Published online by Cambridge University Press: 22 February 2011
Abstract
Epitaxial Ni and Co silicides have been fabricated using pulsed laser melting. Interfacial instabilities and cell formation are suppressed during the liquid-phase epitaxy by melting mono or disilicide layers. Single crystal NiSi2 and CoSi2 films have been grown on (100) and (111) Si following a post-anneal. This method does not require UHV deposition or reaction techniques.
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- Copyright © Materials Research Society 1984
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