Hostname: page-component-848d4c4894-nmvwc Total loading time: 0 Render date: 2024-07-03T13:46:31.529Z Has data issue: false hasContentIssue false
  • English
  • Français

Liquid Phase Epitaxial Growth of Semi-Insulating Aigalnas by Fe Doping

Published online by Cambridge University Press:  26 February 2011

T. Tanahashi ,
S. Okuda ,
M. Kondo ,
M. Sugawara ,
S. Isozumi  and
K. Nakajima
T. Tanahashi
Affiliation:
Fujitsu Laboratories LTD., 10–1, Morinosato-Wakamiya, Atsugi, 243–01 JAPAN
S. Okuda
Affiliation:
Fujitsu Laboratories LTD., 10–1, Morinosato-Wakamiya, Atsugi, 243–01 JAPAN
M. Kondo
Affiliation:
Fujitsu Laboratories LTD., 10–1, Morinosato-Wakamiya, Atsugi, 243–01 JAPAN
M. Sugawara
Affiliation:
Fujitsu Laboratories LTD., 10–1, Morinosato-Wakamiya, Atsugi, 243–01 JAPAN
S. Isozumi
Affiliation:
Fujitsu Laboratories LTD., 10–1, Morinosato-Wakamiya, Atsugi, 243–01 JAPAN
K. Nakajima
Affiliation:
Fujitsu Laboratories LTD., 10–1, Morinosato-Wakamiya, Atsugi, 243–01 JAPAN
Get access

Abstract

Fe-doped semi-insulating AlGalnAs grown by liquid phase epitaxy has been studied and compared to Fe-doped GalnAsP. It has been found that semiinsulating AlGalnAs is easier to obtain than semi-insulating GalnAsP, because of its high iron distribution coeficient. The high resistivity of 1×109 ohm-cm has been obtained for Al0.481n0.52 As grown at 750°C. The activation energy of the Fe acceptor level in the AlGalnAs system has also been studied.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 102 , 1987 , 533
Copyright
Copyright © Materials Research Society 1988

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1.Dutta, N.K., Zilko, J.L., Cella, T., Ackerman, D.A., Shen, T.M., and Napholtz, S.G., Appl. Phys. Lett. 48, 1572 (1986).Google Scholar
2.Sanada, T., Nakai, K., Wakao, K., Kuno, M., and Yamakoshi, S., Appl. Phys. Lett. 51, 1054 (1987).Google Scholar
3.Kondo, M., Sugawara, M., Yamaguchi, A., Tanahashi, T., Isozumi, S., and Nakajima, K., in Extended Abstracts of the 18th Conference on Solid State Devices and Materials (Business Center for Accademic Societies Japan, Tokyo 1986), pp.6 27.Google Scholar
4.Kondo, M., Sugawara, M., Tanahashi, T., Isozumi, S., and Nakajima, K., to be submitted in J. Electronic Materials.Google Scholar
5.Nakajima, K., Tanahashi, T., Komiya, S., and Akita, K., J. Electrochem. Society, 130, 1927 (1983).Google Scholar
6.Sugawara, M., Aoki, O., Nakai, N., Tanaka, K., Yamaguchi, A., and Nakajima, K., in Semi-insulating III-V materials, edited by Kukimoto, H. and Miyazawa, S. (Ohmsha, Tokyo, and North-Holland, Amsterdam, 1986), pp.597.Google Scholar
7.Sugawara, M., Kondo, M., Takanohashi, T., and Nakajima, K., Appl. Phys. Lett. 51, 834 (1987).Google Scholar
8.Olego, O., Chang, T. Y., Silberg, E., Caridi, E. A., and Pinczuk, A., Appl. Phys. Lett. 41, 476 (1982).Google Scholar
9.Sugiyama, Y., Inata, T., Fujii, T., Nakata, Y., Muto, S., and Hiyamizu, S., Jpn. J. Appl. Phys. 25, L648 (1986).Google Scholar
10.Caldas, M. J., Fazzio, A., and Zunger, A., Appl. Phys. Lett. 45, 671 (1984).Google Scholar