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Liquid Phase Electroepitaxial (LPEE) Growth of GaSb and GaInAsSb

Published online by Cambridge University Press:  28 February 2011

Shanthi N. Iyer
Affiliation:
North Carolina A&T State University, Greensboro, NC 27411
Ali Abul-Fadl
Affiliation:
North Carolina A&T State University, Greensboro, NC 27411
Albert T. Macrander
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
Jonathan H.Lewis
Affiliation:
North Carolina A&T State University, Greensboro, NC 27411
Ward J. Collis
Affiliation:
North Carolina A&T State University, Greensboro, NC 27411
James W. Sulhoff
Affiliation:
AT&T Bell Laboratories, Short Hills, NJ 07733
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Abstract

Liquid phase electroepitaxial technique has been used for the growth of GaSb and GalnAsSb in the composition range corresponding to peak band gap wavelengths of 1.7-2.28μm. The growth rate of these layers were examined as a function of current density. The growth rates of these layers are typically 0.8μm/min. at a current density of 10A/cm2. The quality of the layers was evaluated by x-ray diffraction and room temperature photoluminescence.

Type
Research Article
Copyright
Copyright © Materials Research Society 1990

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