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Limited Reaction Processing: Growth of III-V Epitaxial Layers by Rapid Thermal Metalorganic Chemical Vapor Deposition

Published online by Cambridge University Press:  28 February 2011

S. Reynolds ,
D.W. Vook  and
J.F. Gibbons
S. Reynolds
Affiliation:
Stanford University Electronics Laboratories, McCullough 226, Stanford, CA 94305
D.W. Vook
Affiliation:
Stanford University Electronics Laboratories, McCullough 226, Stanford, CA 94305
J.F. Gibbons
Affiliation:
Stanford University Electronics Laboratories, McCullough 226, Stanford, CA 94305
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Abstract

Rapid thermal processing (RTP) has been applied to improve the versatility of metalorganic chemical vapor deposition (MOCVD). We have demonstrated a new pulsed growth method which yields enhanced layer thickness control and abrupt interfaces (2–4 atomic layers) while maintaining a high growth rate (10Å/sec). In this technique, substrate temperature is used as a switch to control the growth of epitaxial layers. The unfocused tungsten halogen lamps used in RTP have also facilitated a novel thermal precracking technique, producing the best GaAs ever grown using trimethylarsenic (TMAs). Background doping is reduced by a factor of 5, and carbon incorporation is reduced by a factor of 10 or more. Net background doping below 1016 cm−3 and room temperature electron mobilities of 4000 to 4500 cm2/V. sec have been obtained.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 92: Symposium B – Rapid Thermal Processing of Electronic Materials , 1987 , 305
Copyright
Copyright © Materials Research Society 1987

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References

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