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Light Influence on Fatigue in PZT Films with Planar Electrodes

Published online by Cambridge University Press:  15 February 2011

V.P. Dudkevich
Affiliation:
Institute of Physics, Department of Crystal Physics, 194 Stachki, Rostov-on-Don, 344104, Russia.
I.M. Sem
Affiliation:
Institute of Physics, Department of Crystal Physics, 194 Stachki, Rostov-on-Don, 344104, Russia.
E.V. Sviridov
Affiliation:
Institute of Physics, Department of Crystal Physics, 194 Stachki, Rostov-on-Don, 344104, Russia.
Z. Surowiak
Affiliation:
Institute of Physics, Department of Crystal Physics, 194 Stachki, Rostov-on-Don, 344104, Russia.
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Abstract

A set of fatigue measurements has been performed on RF-sputtered PZT films of about 2 urn in thickness. Polarization switching characteristics with the sinusoidal ac electric field applied were studied both with sandwich and planar electrodes. Planar structure has allowed one to study the influence of the free charge carriers induced by UV -illumination in the planar capacitor gap. The fatigue became noticeable after 106 switching cycles for a sandwich structure and after 109 cycles for the films with planar electrodes. Illuminating the film during polarization switching greatly accelerates the fatigue process. The additional fatigue induced by the photoactive light was completely reversible.

Type
Research Article
Copyright
Copyright © Materials Research Society 1995

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References

REFERENCES

1. Plumlee, R.H.. Sandia Laboratories, Report SC-RR-67–730, 1967.Google Scholar
2. Kudzin, A.Yu., Panchenko, T.V. and Yudin, S.P., J. Fiz. tverd. tela. 16, (2), 2437, (1975).Google Scholar
3. Nasby, R.D., Schwank, J.R., Rodgards, M.S., Miller, S.L., J. Integrated Ferroelectrics, 2, 91, (1992).Google Scholar
4. Yoo, I.K., Desu, S.B., J. Phys. Stat. Sol. (a), 133, 565, (1992).Google Scholar
5. Paz de Araujo, C.A., McMillan, L.D., Melnick, B.M., Cuchiaro, J.D., Scott, J.F., J. Ferroelectrics 104, 241, (1990).Google Scholar
6. Ramesh, R., Chan, W.R., Wilkens, B., Sands, T., Tarascon, J.M. and Keramidas, V.G., J. Integrated Ferroelectrics, 1, 1, (1992).Google Scholar
7. Fesenko, E.G., Gavrilyatchenko, V.G. and Sementchev, A.F.. Domain structure of multi-axis ferroelectric crystals, (Rostov University Press, Rostov-on-Don 1990), p. 185.Google Scholar
8. Surowiak, Z., Czekaj, D., Margolin, A.M., Sviridov, E.G., Aleshin, V.A. and Dudkevich, V.P., J. Thin Solid Films, 214, 78, (1992).Google Scholar
9. Surowiak, Z., Czekaj, D., Dudkevich, V.P., Bakirov, A.A., Sem, I.M., Sviridov, E.V., J. Thin Solid Films, 245, 157, (1994).Google Scholar
10. Nikitin, Y.a.S., Biryukov, S.V., Sviridov, E.V., Golovko, Yu. I., Zakharchenko, I.N., Mukhortov, V.M., Dudkevich, V.P., J. Ferroelectrics, 120, 197, (1991).Google Scholar
11. Alyoshin, V., Sviridov, E., Bakirov, A., Margolin, A., Zakharchenko, I., Sem, I., Dudkevich, V., J. Ferroelectrics, 128, 7, (1992).Google Scholar
12. Lee, et al., J. Appl. Phys. Letters, 65, 254, (1994).Google Scholar
13. Fridkin, V.M.. Foto-ferroelectrics, (Moscow Science Press, Moscow 1979), p. 264.Google Scholar