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Light Emission in Aperiodic Thue-Morse Dielectrics

Published online by Cambridge University Press:  01 February 2011

L. Dal Negro ,
J. H. Yi ,
V. Nguyen ,
Y. Yi ,
J. Michel  and
L.C. Kimerling
L. Dal Negro
Affiliation:
Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, MA 02139
J. H. Yi
Affiliation:
Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, MA 02139
V. Nguyen
Affiliation:
Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, MA 02139
Y. Yi
Affiliation:
Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, MA 02139
J. Michel
Affiliation:
Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, MA 02139
L.C. Kimerling
Affiliation:
Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, MA 02139
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Abstract

Using Plasma Enhanced Chemical Vapor Deposition (PE-CVD) we fabricated silicon rich, light emitting SiNx/SiO2 Thue-Morse (T-M) multilayer structures in order to investigate the generation and transmission of light in deterministic aperiodic dielectrics. We found that light emission is significantly enhanced at the wavelengths corresponding to T-M resonant states with field enhancement, in agreement with optical transmission data. Emission enhancement effects by almost a factor of 6 with respect to a reference homogeneous SiNx dielectric have been experimentally measured. The unprecedented degree of structural flexibility of T-M systems can provide alternative routes towards the fabrication of optically active multi-wavelength photonic devices.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 832: Symposium F – Group IV Semiconductor Nanostructures , 2004 , F1.3
Copyright
Copyright © Materials Research Society 2005

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References

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