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Laser-Induced Dry Etching of GaAs with High Aspect Ratio

Published online by Cambridge University Press:  25 February 2011

Cheon Lee
Affiliation:
Faculty of Engineering Science and Research Center for Extreme Materials, Osaka University, Toyonaka, Osaka 560, Japan
Hirokazu Sayama
Affiliation:
Faculty of Engineering Science and Research Center for Extreme Materials, Osaka University, Toyonaka, Osaka 560, Japan
Susumu Namba
Affiliation:
Faculty of Engineering Science and Research Center for Extreme Materials, Osaka University, Toyonaka, Osaka 560, Japan
Mikio Takai
Affiliation:
Faculty of Engineering Science and Research Center for Extreme Materials, Osaka University, Toyonaka, Osaka 560, Japan
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Abstract

Laser-induced thermochemical reactions have been investigated for GaAs in a CCl2F2 gas ambient using an argon-ion laser. The chemical compositions of the reaction products deposited on the etched groove were measured by Auger electron spectroscopy (AES). The conditions of laser power, scan speed, and CC12F2 gas pressure under which the etching reaction occurs without deposition of the residue were clarified. High etching rates up to 267 μm/s and an aspect ratio of 4.5 have been achieved by a single scan of a laser beam. Microprobe photoluminescence and Raman scattering measurement were carried out on the etched surface to characterize damage induced by this processing.

Type
Research Article
Copyright
Copyright © Materials Research Society 1992

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