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Laser Photoetching of Polymers

Published online by Cambridge University Press:  25 February 2011

H. S. Cole ,
Y. S. Liu ,
H. R. Philipp  and
R. Guida
H. S. Cole
Affiliation:
General Electric Corporate Research and Development P.O. Box 8, Schenectady, NY 12301
Y. S. Liu
Affiliation:
General Electric Corporate Research and Development P.O. Box 8, Schenectady, NY 12301
H. R. Philipp
Affiliation:
General Electric Corporate Research and Development P.O. Box 8, Schenectady, NY 12301
R. Guida
Affiliation:
General Electric Corporate Research and Development P.O. Box 8, Schenectady, NY 12301
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Abstract

Laser photoetching of polymers has been shown to be a useful method of producing via holes or patterns and is of potential importance in microelectronics fabrication. The maskless, self-developing nature of the process also offers unique opportunities in the preparation of packaging assemblies. Etching of via holes at any discretionary site for multichip interconnect, for example, provides the circuit designer with additional design flexibility. The photoetching rate is dependent on the absorption coefficient of the polymer (at the laser wavelength) and the irradiating fluence. Further, there appears to be an optimum absorption coefficient to achieve the maximum photoetch rate for a given fluence level. To laser drill holes for interconnects, it is desirable to irradiate at the highest energy (increased rate) possible without damaging underlying metal contact pads.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 72: Symposium G – Electronic Packaging Materials Science II , 1986 , 241
Copyright
Copyright © Materials Research Society 1986

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