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Laser Crystallization and Annealing of Ferroelectric Thin Films

Published online by Cambridge University Press:  15 February 2011

J.S. Zhu ,
X.M. Lu ,
X. Liu ,
W. Tian ,
Z. Yang  and
Y.N. Wang
J.S. Zhu
Affiliation:
National Lab of Solid State Microstructures, Nanjing University, Nanjing 210093, China
X.M. Lu
Affiliation:
National Lab of Solid State Microstructures, Nanjing University, Nanjing 210093, China
X. Liu
Affiliation:
National Lab of Solid State Microstructures, Nanjing University, Nanjing 210093, China
W. Tian
Affiliation:
National Lab of Solid State Microstructures, Nanjing University, Nanjing 210093, China
Z. Yang
Affiliation:
National Lab of Solid State Microstructures, Nanjing University, Nanjing 210093, China
Y.N. Wang
Affiliation:
National Lab of Solid State Microstructures, Nanjing University, Nanjing 210093, China
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Abstract

Ferroelectric PbZr0.44Ti0.56O3 film with pure ferroelectric phase was fabricated by Ar3+ and KrF laser crystallization technique from as-deposited amorphous films, with the substrate at room temperature. Laser annealing technique was also used to improve the quality of BaTiO3 (BT) films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 397: Symposium B – Advanced laser Processing of Materials-Fundamentals and Applications , 1995 , 413
Copyright
Copyright © Materials Research Society 1996

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References

REFERENCES

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