Hostname: page-component-77c89778f8-gvh9x Total loading time: 0 Render date: 2024-07-23T07:24:17.109Z Has data issue: false hasContentIssue false
  • English
  • Français

Irradiated cubic single crystal SiC as a high temperature sensor

Published online by Cambridge University Press:  01 February 2011

Alex A. Volinsky  and
Lev Ginzbursky
Alex A. Volinsky
Affiliation:
University of South Florida, Department of Mechanical Engineering, Tampa FL 33620USA, Volinsky@eng.usf.edu
Lev Ginzbursky
Affiliation:
L.G. Tech-Link, Chandler, AZ 85226 USA, lev_lgtechlink@qwest.net
Get access

Abstract

Radiation is known to cause point defects formation in different materials. In the case of cubic SiC single crystal radiation flux on the order of 2·1020 neutrons/cm2 at 0.18 MeV causes over 3% volume lattice expansion. Radiation-induced strain (measurable by X-Ray diffraction) can be relieved when the annealing temperature exceeds the temperature of irradiation. Based on this effect the original technology of maximum temperature measurement was developed a while ago. Single crystal SiC sensor small size (200–500 microns), wide temperature range (150–1450 °C), “no-lead” installation, and exceptional accuracy make it very attractive for use in small, rotating and “hard-to-access” parts, including, but not limited to gas turbine blades, space shuttle ceramic tiles, automobile engines, etc. With the advances in X-Ray diffraction measurements, crystal and thin film growth techniques, it is the time to revise and update this technology. Modeling radiation damage, as well as annealing effects are also beneficial.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 792: Symposium R – Radiation Effects and Ion Beam Processing of Materials , 2003 , R5.3
Copyright
Copyright © Materials Research Society 2004

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. “Thermal Paint Technical Information”, Rolls-Royce Inc. (www.rolls-roice.com)Google Scholar
2. “Templug User Information Guide”, Rev.2.0, 1997, Testing-Engineers, Inc.Google Scholar
3. Huang, H., Ghoniem, N., J. of Nuclear Mater. 250, pp. 192–199 (1997)Google Scholar
4. Nikolaenko, V.A., Morozov, V.A., Kasianov, N.I. “A Crystal Maximum Temperature Measurer for Special Applications.” Rev. Int. Htes Temp. et Refract. 1976, vol. 13, pp. 1720 Google Scholar
5. Nikolaenko, V.A., Karpuhin, V.I., “Measuring Temperature with Irradiated Materials”, “Izmerenie Temperaturi s Pomoschiu Obluchennih Materialov” Energoatomizdat, Moscow (1986)Google Scholar
6. Kuznetsov, V.N., Nikolaenko, V.A. “Metrologia Metoda Izmerenia Maksimalnoi Temperaturi s Pomoschiu IMTK”, IAE-3208, Moscow (1979)Google Scholar
7. Weber, W.J., Gao, F., Devanathan, R., Jiang, W., Zhang, Y., “Experimental and Computational Studies of Ion-Solid Interactions in Silicon Carbide”, Mater. Res. Symp. Proc., Vol. 792, R5.1 (2004)Google Scholar
8. Volinsky, A.A., Ginzbursky, L.G., Morozov, V.A., “Crystal Temperature Sensor Technology Status and Future Research”, 2003 ASME Mechanics and Materials Conference book of abstracts, June 2003, Scottsdale AZ, 10 (2003)Google Scholar