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Ir, Visible, and UV Photoluminescence Dependence on the Composition of Quantum Nanocrystals

Published online by Cambridge University Press:  21 February 2011

S.L Kim ,
T. Hart ,
B.K. Khan ,
G.S. Tompa ,
Y. Lu ,
G. Sun  and
J. Khurgin
S.L Kim
Affiliation:
Structured Materials Industries Inc., Newark, NJ 07102
T. Hart
Affiliation:
Stevens Institute of Technology, Hoboken, NJ 07030
B.K. Khan
Affiliation:
N. A. Philips, Briarcliff, NY
G.S. Tompa
Affiliation:
Emcore Corp. Somerset, NJ
Y. Lu
Affiliation:
Rutgers University, Piscataway, NJ
G. Sun
Affiliation:
Johns Hopkins University, Baltimore, MD
J. Khurgin
Affiliation:
Johns Hopkins University, Baltimore, MD
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Abstract

The recent demonstration of PL (Photoluminescence) and EL (Electroluminescence) in porous silicon has been a tremendous advance toward the integration of optoelectronics and Si digital electronics. It has come to be understood that the primary source of luminescence is quantized structures of Si or quantum nanocrvstals (QNCs). We have demonstrated IR, visible and UV photoluminescence from QNCs formed of Si and of Ge in a homogeneous SiCO2 matrix. The nanocrystal dimensions and resulting PL indicate that the active mechanism is 3-dimensional confinement of carriers in the QNCs within the wider bandgap SiCO2. Raman analysis confirms the presence of QNCs in the ~20 to 100 A range. SIMS analysis was used to gauge compositional effects on luminescence wavelength. The QNC matrix concept is immediately extendable to several additional material systems. The stable nature of QNCs embedded within a matrix offer further advances toward the integration of optoelectronics with Si devices.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 326: Symposium M – Growth, Processing, and Characterization of Semiconductor Heterostructures , 1993 , 591
Copyright
Copyright © Materials Research Society 1994

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