Published online by Cambridge University Press: 26 February 2011
A kinetic model has been developed to investigate the synergistic effects of radiation-enhanced diffusion, radiation-induced segregation and preferential sputtering on the spatial redistribution of implanted solutes during implantation at elevated temperatures. Sample calculations were performed for Al+ and Si+ ions implanted into Ni. With the present model, the influence of various implantation parameters on the evolution of implant concentration profiles could be examined in detail.
Work supported by the U. S. Department of Energy, BES-Materials Sciences, and BES-Applied Mathematical Sciences, under Contract W-31-109-Eng-38.
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