Hostname: page-component-77c89778f8-m8s7h Total loading time: 0 Render date: 2024-07-17T16:44:00.133Z Has data issue: false hasContentIssue false
  • English
  • Français

Interplay Between Strain and Effective Electron Mass on the Absorption Strength of Dilute Nitride Semiconductor Quantum Wires

Published online by Cambridge University Press:  01 February 2011

Andrea Feltrin ,
Andenet Alemu  and
Alexandre Freundlich
Andrea Feltrin
Affiliation:
feltrin@tcsam.uh.edu, University of Houston, Center for Advanced Materials, 724 Science & Research Building 1, Houston, Texas, 77204-5004, United States, 713-743-8731
Andenet Alemu
Affiliation:
andy@tcsam.uh.edu, University of Houston, Center for Advanced Materials, 724 Science & Research Building 1, Houston, Texas, 77204-5004, United States
Alexandre Freundlich
Affiliation:
alexf@tcsam.uh.edu, University of Houston, Center for Advanced Materials, 724 Science & Research Building 1, Houston, Texas, 77204-5004, United States
Get access

Abstract

We have investigated the absorption spectrum and strength of InyGa1−yAs1−xNx quantum wires. We show that compounds with varying fractions of indium and nitrogen, but similar band gaps have different absorption patterns. This behavior is related to the interplay between different effects as strain, which mainly affects the band offsets, and the increased electron mass in dilute nitride III-V semiconductors. We also study how the influence of these parameters changes with the optical band gaps associated to common optical telecommunication wavelengths. Our model calculations are performed in the parabolic band approximation and include excitonic effects.

Keywords

nanostructureoptical propertiesabsorption
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 940: Symposium P – Semiconductor Nanowires – Fabrication, Physical Properties, and Applications , 2006 , 0940-P08-20
Copyright
Copyright © Materials Research Society 2006

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Baillargeon, J.L. et al., Appl. Phys. Lett. 60, 2540 (1992).Google Scholar
2 Shan, W. et al., Phys. Rev. Lett. 82, 1221 (1999).Google Scholar
3 Lindsay, A., O'Reilly, E.P., Phys. Rev. Lett. 93, 196402 (2004).Google Scholar
4 Kent, P.R.C., Zunger, A., Phys. Rev. Lett. 86, 002613 (2001).Google Scholar
5 Skierbiszewski, C. et al., Appl. Phys. Lett. 76, 2409 (2000).Google Scholar
6 Tomic, S. et al., Phys. Rev. B 69, 245305 (2004).Google Scholar
7 Makino, S. et al., J. Cryst. Growth 221, 561 (2000).Google Scholar
8 Bhusal, L., Alemu, A., Freundlich, A., Phys. Rev. B 72, 073309 (2005).Google Scholar
9 Bastard, G., Wave Mechanics applied to semiconductor heterostrucutres, John Wiley & Sons, Indianapolis, 1991.Google Scholar
10 Rudin, S., Reinecke, T.L., Segall, B., Phys. Rev. B 42, 11218 (1990).Google Scholar
11 Ogawa, T., Takagahara, T., Phys. Rev. B 44, 8138 (1991).Google Scholar
12 Vurgaftman, I., Meyer, J.R., Ram-Mohan, L.R., J. Appl. Phys. 89, 5815 (2001).Google Scholar
13 Vurgaftman, I., Meyer, J.R., J. Appl. Phys. 94, 3675 (2003).Google Scholar
14 Neugebauer, J., Walle, C. G. Van de, Physical Review B 51, 10568 (1995).Google Scholar