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Internal Stress of ZnO thin Films Caused by Thickness Distribution and Crystallinity

Published online by Cambridge University Press:  10 February 2011

M. Takeuchi ,
K. Inoue ,
Y. Yoshino  and
K. Ohwada
M. Takeuchi
Affiliation:
R&D division, Murata Mfg. Co., Ltd., I-18-1 Hakusan Midoriku, Yokohama, Kanagawa 226-0006, Japan
K. Inoue
Affiliation:
R&D division, Murata Mfg. Co., Ltd., I-18-1 Hakusan Midoriku, Yokohama, Kanagawa 226-0006, Japan
Y. Yoshino
Affiliation:
R&D division, Murata Mfg. Co., Ltd., I-18-1 Hakusan Midoriku, Yokohama, Kanagawa 226-0006, Japan
K. Ohwada
Affiliation:
R&D division, Murata Mfg. Co., Ltd., I-18-1 Hakusan Midoriku, Yokohama, Kanagawa 226-0006, Japan
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Abstract

The improvement of thickness distribution and crystallinity in ZnO thin films prepared by radio frequency (rf) planer magnetron sputtering has been studied. Optimum thickness distribution of less than ± 2.2% in a 3-inch wafer is obtained by changing the substrate angle to the ZnO target and is in accordance with cosine law. The c-axis orientation perpendicular to the silicon substrate is confirmed by x-ray diffraction. The stress of ZnO thin films is larger than 0.3GPa and its distribution is independent of the substrate angle that is set at a slant to the optimum angle for thickness distribution. These results indicate that thickness distribution of ZnO thin films heavily depends on the substrate angle, while the stress and its distribution are independent of the setting angle of the substrate. Stress distribution is attributed to the distribution of argon ions and sputtered molecules impinging a wafer.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 518: Symposium N – Microelectromechanical Structures for Materials Research , 1998 , 215
Copyright
Copyright © Materials Research Society 1998

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