Hostname: page-component-cd9895bd7-7cvxr Total loading time: 0 Render date: 2024-12-12T20:03:10.186Z Has data issue: false hasContentIssue false

Interfacial Properties, Surface Morphology and Thermal Stability of Epitaxial GaAs on Ge Substrates with High-k Dielectric for Advanced CMOS Applications

Published online by Cambridge University Press:  01 February 2011

A Kumar
Affiliation:
avishek.eee@gmail.com, Nanyang Technological University, School of EEE, Singapore, Singapore
G K Dalapati
Affiliation:
dalapatig@imre.a-star.edu.sg, IMRE A*STAR, Singapore, Singapore
Terence Kin Shun Wong
Affiliation:
ekswong@ntu.edu.sgterencekswong@gmail.com, Nanyang Technological University, Singapore, Singapore
M K Kumar
Affiliation:
kumarm@imre.a-star.edu.sg, IMRE A*STAR, Singapore, Singapore
C K Chia
Affiliation:
chiac@imre.a-star.edu.sg, IMRE A*STAR, Singapore, Singapore
H Gao
Affiliation:
gaoh@imre.a-star.edu.sg, IMRE A*STAR, Singapore, Singapore
B Z Wang
Affiliation:
wangb@imre.a-star.edu.sg, IMRE A*STAR, Singapore, Singapore
A S Wong
Affiliation:
wonga@imre.a-star.edu.sg, IMRE A*STAR, Singapore, Singapore
D Z Chi
Affiliation:
chid@imre.a-star.edu.sg, IMRE A*STAR, Singapore, Singapore
Get access

Abstract

Epitaxial GaAs layers had been grown by metal organic chemical vapor deposition at 620°C on Ge(100) susbtrates. The surface roughness of the GaAs is greater than that of GaAs bulk wafers and epilayer morphology is influenced by miscut of the Ge substrate. The GaAs/Ge interface is of good quality and devoid of misfit dislocations and antisite defects. However, Ge diffusion into GaAs occurred during epitaxy and resulted in auto-doping. ZrO2 was deposited by magnetron sputtering onto the epi-GaAs. Capacitance voltage measurements show that the TaN/ZrO2/epi-GaAs capacitor has an interfacical with more defects than a ZrO2/bulk GaAs interface. An improved interface with smaller frequency dispersion can be formed by atomic layer deposition of the high-k dielectric layer onto the epi-GaAs.

Type
Research Article
Copyright
Copyright © Materials Research Society 2010

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Thompson, S.E. Chau, R.S. Ghani, T. Mistry, K. and Tyagi, S. IEEE Trans. Semicond. Manu. 18, 26 (2005).Google Scholar
2 Heyns, M. and Tsai, W. MRS Bull. 34, 485 (2009).Google Scholar
3 Gong, Y. Ng, C.M. and Wong, T.K.S. J. Electrochem. Soc. 156, H948 (2009).Google Scholar
4 Ren, F. Hong, M. Hobson, W.S. Kuo, J.M. Lothian, J.R. Mannaerts, J.P. Kwo, J. Chu, S.N.G. Chen, Y.K. and Cho, A.Y. Solid-State Electron. 41, 1751 (1997).Google Scholar
5 Ye, P.D. Wilk, G.D. and Frank, M.M. Processing and Characterization of III-V Compound Semiconductor MOSFETs Using Atomic Layer Deposited Gate Dielectrics, Advanced Gate Stacks for High-Mobility Semiconductors, ed. Dimoulas, A. Gusev, E. McIntyre, P.C. and Heyns, M. (Springer, 2007) pp. 341361.Google Scholar
6 Tsai, W. Goel, N. Kovershnikov, S. Majhi, P. and Wang, W. Microelect. Eng. 86, 1540 (2009).Google Scholar
7 Xuan, Y. Wu, Y.Q. and Ye, P.D. IEEE Elect. Dev. Lett. 29, 294 (2008).Google Scholar
8 Passlack, M. Droopad, R. Rajagopalan, K. Abrokwah, J. Zurcher, P. Hill, R. Moran, D. Li, X. Zhou, H. MacIntyre, D. Thoms, S. Thayne, I. Dig. CS MANTECH Conf. Austin TX, 2007 pp. 235238.Google Scholar
9 Sze, S.M. Physics of Semiconductor Devices, (Wiley, 1981) pp. 850851.Google Scholar
10 Chui, C.O. and Saraswat, K.C. Germanium Nanodevices and Technology, Advanced Gate Stacks for High-Mobility Semiconductors, ed. Dimoulas, A. Gusev, E. McIntyre, P.C. and Heyns, M. (Springer, 2007) pp. 293313.Google Scholar
11 Degraeve, R. Cartier, E. Kauerauf, T. Carter, R. Pantisano, L. Kerber, A. and Groseneken, G. MRS Bull. 27, 222 (2002).Google Scholar
12 Dalapati, G.K. Kumar, M.K. Chia, C.K. Gao, H. Wang, B.Z. Wong, A.S.W. Kumar, A. Chiam, S.Y., Pan, J.S. and Chi, D.Z. J. Electrochem. Soc. 157, H825 (2010).Google Scholar