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Interface States at Au/Gaas Schottky Contacts

Published online by Cambridge University Press:  26 February 2011

J. Werner  and
K. Ploog
J. Werner
Affiliation:
IBM T.J.Watson Research Center, P.O.Box 218, Yorktown Heights, NY 10598, USA
K. Ploog
Affiliation:
Max-Planck-Institut für Festkörperforschung, Heisenbergstr.l, D-7000 Stuttgart 80, West Germany
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Abstract

We present a new method for the characterization of traps at the interfacial layer of metal/semiconductor contacts. The method is based on measurements of the ac-admittance of Schottky contacts over a wide frequency range. The frequency dependence is analyzed within a new Trap Transistor Model which explains the ac-behavior as well as the dc-characteristics. In particular we propose that the ac-current across the interface consists of capacitive as well as of conductive parts. We are able to deduce the density of trap states at the majority carrier Fermi level as well as the capture cross section of the traps. The model is applied to Au/GaAs-Schottky contacts. We find a weak energy dependence for the density of interface states as well as for their capture cross section within the energy range of 0.45eV to 0.57eV below the conduction band edge.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 54 , 1985 , 395
Copyright
Copyright © Materials Research Society 1986

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Footnotes

*

On leave from Max-Planck-Institut für Festkörperforschung, Stuttgart, West Germany

References

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