Hostname: page-component-77c89778f8-gvh9x Total loading time: 0 Render date: 2024-07-22T10:10:38.510Z Has data issue: false hasContentIssue false
  • English
  • Français

Integrated Rapid Thermal CVD Processing Solutions for 0.18–0.25μm Technologies

Published online by Cambridge University Press:  10 February 2011

H. Gilboa ,
Y. E. Gilboa ,
Z. Atzmon ,
S. Levy ,
H. Spilberg ,
E. Bransky ,
Z. Doitel ,
R.P.S. Thakur ,
R. A. Weimer  and
S. Deboer
...Show all authors
H. Gilboa
Affiliation:
AGI, 4425 Fortran Drive, San Jose, CA 95134
Y. E. Gilboa
Affiliation:
AGI, 4425 Fortran Drive, San Jose, CA 95134
Z. Atzmon
Affiliation:
AGI, 4425 Fortran Drive, San Jose, CA 95134
S. Levy
Affiliation:
AGI, 4425 Fortran Drive, San Jose, CA 95134
H. Spilberg
Affiliation:
AGI, 4425 Fortran Drive, San Jose, CA 95134
E. Bransky
Affiliation:
AGI, 4425 Fortran Drive, San Jose, CA 95134
Z. Doitel
Affiliation:
AGI, 4425 Fortran Drive, San Jose, CA 95134
R.P.S. Thakur
Affiliation:
Micron Technology Inc., 8000 S. Federal Way Road, Boise, ID 83707
R. A. Weimer
Affiliation:
Micron Technology Inc., 8000 S. Federal Way Road, Boise, ID 83707
S. Deboer
Affiliation:
Micron Technology Inc., 8000 S. Federal Way Road, Boise, ID 83707
J. Pan
Affiliation:
Micron Technology Inc., 8000 S. Federal Way Road, Boise, ID 83707
Get access

Abstract

The evolution of integrated single-wafer processing for high-temperature applications in the front end of the line (FEOL) occurred with the advancements in single-wafer rapid thermal processing and its acceptance as a manufacturing technology. The Integra RTCVD cluster tool for high-temperature applications features wafer cleaning, rapid thermal processing and single wafer chemical vapor deposition steps. The paper presents integrated vapor phase clean and RTCVD applications for FLASH memory gate stack and DRAM cell.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 470: Symposium F – Rapid Thermal and Integrated Processing IV , 1997 , 215
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. “In- Situ Vapor Phase Pre- Gate Oxide Cleaning and Rapid Thermal Oxide Growth in a Cluster Tool” Green, M.L., Ma, Y. et. al. Mat. Res. Soc. proc. Spring Meeting p. 141 (1995)Google Scholar
2. “In- Situ Vapor Phase Pre-Gate Oxide Cleaning and it's Effect on Metal-Oxide Semicinductor Device Characterization” Ma, Y., Green, M. L., et al. J. Vac. Sci. Technol. B 13(4), p. 1460 (1995).Google Scholar
3. “A Comparison of In-Situ Vapor Gas Phase Cleaning to Conventional Based Wet Cleaning” Grant, J. M., Mat. Res. Soc. Symp. Proc. vol. 342, p. 313 (1994).Google Scholar
4. “Rapid Thermal Oxidation of Silicon in Mixture of Oxygen and Nitrous Oxide”. Grant, M., Mat. Res. Soc. Symp. Proc. Vol 429 p. 257 (1996)Google Scholar
5. “Front End of the Line (FEOL) Cluster Technologies There is Enough Room for RTP” St, R.P.S. et al 4th Int Conf on dvanced Thermal Processing of Semiconductor RTP 96 (1996)Google Scholar