Published online by Cambridge University Press: 25 February 2011
The potential of realizing quantum box structures via in-situ molecular beam epitaxical growth on the (111)B face of GaAs is explored. Growth is carried out on patterned (111)3B substrates with an array of truncated triangular pyramidal mesas. The mesa tops with arbitrarily small areal dimensions are used as templates for quantum box realization. Under appropriate conditions of growth along with the attendant interfacet migration, a mesa top growth profile characterized by monotonically shrinking lateral dimensions resulting in 'pinch-off is achieved.
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