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Initial Stages of MOCVD Growth of Gallium Nitride Using a Multi-Step Growth Approach

Published online by Cambridge University Press:  10 February 2011

J. T. Kobayashi ,
N. P. Kobayashi ,
P. D. Dapkus ,
X. Zhang  and
D. H. Rich
J. T. Kobayashi
Affiliation:
Compound Semiconductor Laboratory, Departments of Materials Science and Electrical Engineering/Electrophysics, University of Southern California, Los Angeles, CA 90089–0483
N. P. Kobayashi
Affiliation:
Compound Semiconductor Laboratory, Departments of Materials Science and Electrical Engineering/Electrophysics, University of Southern California, Los Angeles, CA 90089–0483
P. D. Dapkus
Affiliation:
Compound Semiconductor Laboratory, Departments of Materials Science and Electrical Engineering/Electrophysics, University of Southern California, Los Angeles, CA 90089–0483
X. Zhang
Affiliation:
Photonic Materials and Devices Laboratory, Department of Materials Science and Engineering, University of Southern California, Los Angeles, CA 90089–0241
D. H. Rich
Affiliation:
Photonic Materials and Devices Laboratory, Department of Materials Science and Engineering, University of Southern California, Los Angeles, CA 90089–0241
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Abstract

A multilayer buffer layer approach to GaN growth has been developed in which the thermal desorption and mass transport of low temperature buffer layer are minimized by deposition of successive layers at increased temperatures. High quality GaN with featureless surface morphology has been grown on (0001) sapphire substrate by metalorganic chemical vapor deposition using this multilayer buffer layer approach. The lateral growth and coalescence of truncated 3D islands (TTIs) nucleated on low temperature buffer layers at the initial stage of overlayer growth is affected by the thickness of the final buffer layer on which nucleation of TTIs takes place. The effect of the thickness of this buffer layer on the quality of GaN is studied by using scanning electron microscopy, van der Pauw geometry Hall measurements and cathodoluminescence and an optimum value of 400Å is obtained.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 468: Symposium D – Gallium Nitride and Related Materials II , 1997 , 187
Copyright
Copyright © Materials Research Society 1997

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References

REFERENCES

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