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Inhomogeneous Electric Potential Distributions Induced by in Clusters Grown on P-WSE2 (0001) Surfaces

Published online by Cambridge University Press:  25 February 2011

R. Schlaf ,
H. Sehnert ,
C. Pettenkofer  and
W. Jaegermann
R. Schlaf
Affiliation:
Hahn-Meitner-lnstitut, Abteilung Solare Energetik, Glienicker Str. 100, 1000 Berlin 39, Germany
H. Sehnert
Affiliation:
Hahn-Meitner-lnstitut, Abteilung Solare Energetik, Glienicker Str. 100, 1000 Berlin 39, Germany
C. Pettenkofer
Affiliation:
Hahn-Meitner-lnstitut, Abteilung Solare Energetik, Glienicker Str. 100, 1000 Berlin 39, Germany
W. Jaegermann
Affiliation:
Hahn-Meitner-lnstitut, Abteilung Solare Energetik, Glienicker Str. 100, 1000 Berlin 39, Germany
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Abstract

In deposited on UHV cleaved p-WSe2 (0001) is investigated by photoelectron spectroscopy (XPS, UPS), low energy electron diffraction (LEED), scanning electron microscopy (SEM), and surface photovoltage (SPV) experiments. In forms an atomically abrupt, non-reactive metallic overlayer on the substrate. It grows in threedimensional clusters (Volmer-Weber growth mode). The experimentally observed band bending induced by In at RT is smaller than expected by the Schottky limit. Photoemission source induced SPV values at 100 K are saturated and different for the substrate and In overlayer emission lines. The results are explained by laterally inhomogeneous electric potential distributions due to the In clustering on the semiconductor surface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 221: Symposium C – Heteroepitaxy of Dissimilar Materials , 1991 , 137
Copyright
Copyright © Materials Research Society 1991

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References

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