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Infrared-Sensitive Photovoltaic Devices for Thermophotovoltaic Applications

Published online by Cambridge University Press:  10 February 2011


Navid S. Fatemi
Affiliation:
Essential Research, Inc., Cleveland, OH
David M. Wilt
Affiliation:
NASA Lewis Research Center, Cleveland, OH
Richard W. Hoffman
Affiliation:
Essential Research, Inc., Cleveland, OH
Victor G. Weizer
Affiliation:
Essential Research, Inc., Cleveland, OH

Abstract

One of the critical components in a thermophotovoltaic (TPV) system is the infrared-sensitive photovoltaic (PV) semiconductor device that converts the emitted radiation to electricity. Currently, several semiconductor material systems are under development by various workers in the field. The most common are InGaAs/InP, GaSb, and InGaSbAs/GaSb. These devices normally have electronic energy bandgap values in the range of 0.50-0.74 eV. In addition, the design and structure of these devices fall into two distinct formats: conventional planar and monolithic interconnected module (MIM). The conventional planar devices normally have one semiconductor junction and are high-current/low-voltage devices. In a MIM, small area PV cells are connected in series monolithically, on a semi-insulating substrate. This results in the formation of a single high-voltage/low-current module. Electrical and optical performance results for MIMs with electronic energy bandgaps of 0.60 and 0.74 eV will be presented.


Type
Research Article
Copyright
Copyright © Materials Research Society 1999

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References

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