Hostname: page-component-84b7d79bbc-5lx2p Total loading time: 0 Render date: 2024-07-29T16:07:46.933Z Has data issue: false hasContentIssue false
  • English
  • Français

Influence of Rapid Thermal Annealing on Recombination Properties of Polycrystalline Silicon

Published online by Cambridge University Press:  03 September 2012

M. Kittler  and
W. Seifert
M. Kittler
Affiliation:
Institute of Semiconductor Physics, W.-Korsing-Str. 2, POB 409 D-O 1200 Frankfurt (Oder), Germany
W. Seifert
Affiliation:
Institute of Semiconductor Physics, W.-Korsing-Str. 2, POB 409 D-O 1200 Frankfurt (Oder), Germany
Get access

Abstract

Rapid thermal annealing was shown by EBIC to increase the minority-carrier diffusion length in cast polycrystalline silicon. The beneficial effect is due to a deactivation of intragrain defects (mainly dislocations) and is stable against post-RTA annealing up to at least 600 °C/ 10 min.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 262: Symposium E – Defect Engineering in Semiconductor Growth, Processing and Device Technology , 1992 , 969
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Schindler, R., Räuber, A., Proc. GADEST '91, Kittier, M., Richter, H. (Eds.), Trans Tech Publications in Solid State Phenomena, Vol. 19 & 20 (1991), pp. 341–352 Google Scholar
[2] Knobloch, J., Voss, B., Leo, K., Proc. 18th IEEE Photovoltaic Spec. Conf., IEEE (1985). p. 445 Google Scholar
[3] Wu, C. J., Wittry, D. B., J. Appl. Phys. 49, 2827 (1978)CrossRefGoogle Scholar
[4] Kittler, M., Seifert, W.. Rev. de Physique Appliquee 24, C6–31 (1989)Google Scholar
[5] Eichhammer, W., Quat, V-Thuong, Siffert, P.. J. Appl. Phys. 66, 3857 (1989)CrossRefGoogle Scholar