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Influence of Post-annealing Temperature on the Properties of Ti-Doped In2O3 Transparent Conductive Films by DC Ratio-frequency Sputtering
Published online by Cambridge University Press: 01 June 2011
In this paper, titanium doped (2 wt. %) indium oxide (TIO) thin films deposited on quartz substrates by DC sputtering were presented. Dealt with different temperatures from 420°C to 620°C of post-annealing in vacuum for 40 minuets, the samples display different optical and electric properties. The deposited films exhibited polycrystalline in the preferred (222) and (440) orientation, with higher mobility (up to 48.6 cm2/VS) and lower resistivity (1.26 ×10-4Ω·cm) at the post-annealing temperature of 520°C. The average optical transmittance of the films is over 92% in a wavelength range from 300 to 1100 nm and the transmittance has only around 1.8% change with different post-annealing temperatures.
- Research Article
- MRS Online Proceedings Library (OPL) , Volume 1352: Symposium GG – Titanium Dioxide Nanomaterials , 2011 , mrss11-1352-gg05-03
- Copyright © Materials Research Society 2011