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Influence of In0.2Ga0.8As strain-reducing layer on the active region of quantum dot superluminescent diodes

Published online by Cambridge University Press:  11 February 2011


Z. Y. Zhang
Affiliation:
Key laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, People's Republic of, China
Ch. M. Li
Affiliation:
Key laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, People's Republic of, China
P. Jin
Affiliation:
Key laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, People's Republic of, China
X. Q. Meng
Affiliation:
Key laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, People's Republic of, China
B. Xu
Affiliation:
Key laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, People's Republic of, China
X. L. Ye
Affiliation:
Key laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, People's Republic of, China
Z. G. Wang
Affiliation:
Key laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, People's Republic of, China

Abstract

We have investigated the optical properties of asymmetric multiple layer stacked self-assembled InAs quantum dot with different interlayer. We found that asymmetric multiple stacked QD samples with In0.2Ga0.8As + GaAs interlayer can afford a 180nm flat spectral width with strong PL intensity compared to other samples at room temperature. We think this result is due to the introduction of In0.2Ga0.8As strain-reducing layer. Additionally, for the broad spectral width and the strong PL intensity, this structure can be a promising candidate for quantum-dot superluminescent diodes.


Type
Research Article
Copyright
Copyright © Materials Research Society 2003

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Influence of In0.2Ga0.8As strain-reducing layer on the active region of quantum dot superluminescent diodes
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