Skip to main content Accessibility help
×
Home
Hostname: page-component-78dcdb465f-2ktwh Total loading time: 0.254 Render date: 2021-04-14T21:09:26.133Z Has data issue: true Feature Flags: { "shouldUseShareProductTool": true, "shouldUseHypothesis": true, "isUnsiloEnabled": true, "metricsAbstractViews": false, "figures": false, "newCiteModal": false, "newCitedByModal": true }

Influence of Growth Conditions and Substrate Properties on Formation of Interfacial Dislocations and Dislocation Half-loop Arrays in 4H-SiC(0001) and (000-1) Epitaxy

Published online by Cambridge University Press:  01 February 2011

Hidekazu Tsuchida
Affiliation:
tsuchida@criepi.denken.or.jp, CRIEPI, Materials Science Research Laboratory, 2-6-1 Nagasaka, Yokosuka, Kanagawa, 240-0196, Japan, +81-70-6568-9557, +81-46-856-5571
Isaho Kamata
Affiliation:
kamata@criepi.denken.or.jp, Central Research Institute of Electric Power Industry (CRIEPI), 2-6-1 Nagasaka, Yokosuka, Kanagawa, 240-0196, Japan
Kazutoshi Kojima
Affiliation:
kazu-kojima@aist.go.jp, National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba, Ibaraki, 305-8568, Japan
Kenji Momose
Affiliation:
Kenji_Momose@SDK.co.jp, SHOWA DENKO K.K. (SDK), 1505 Shimokagemori, Chichibu, Saitama, 369-1871, Japan
Michiya Odawara
Affiliation:
Michiya_Odawara@sdk.co.jp, SHOWA DENKO K.K. (SDK), 1505 Shimokagemori, Chichibu, Saitama, 369-1871, Japan
Tetsuo Takahashi
Affiliation:
tetsuo-takahashi@aist.go.jp, National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba, Ibaraki, 305-8568, Japan
Yuuki Ishida
Affiliation:
y-ishida@aist.go.jp, National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba, Ibaraki, 305-8568, Japan
Keiichi Matsuzawa
Affiliation:
Keiichi_Matuzawa@sdk.co.jp, SHOWA DENKO K.K. (SDK), 1505 Shimokagemori, Chichibu, Saitama, 369-1871, Japan
Get access

Abstract

Formation of interfacial dislocations (IDs) and dislocation half-loop arrays (HLAs) and their appearance in 4H-SiC epi-wafers are investigated by X-ray topography and KOH etching analysis. Synchrotron reflection X-ray topography demonstrates the ability to image IDs and HLAs simultaneously and reveal their densities as well as spatial distributions in the epi-wafers. The vertical location of IDs in the epi-wafer is also examined by this technique. The influence of wafer warp, in-situ H2 etching prior to epitaxial growth, substrate off-angle as well as the growth face (Si-face and C-face) on the densities and spatial distributions of IDs and HLAs are discussed.

Type
Research Article
Copyright
Copyright © Materials Research Society 2008

Access options

Get access to the full version of this content by using one of the access options below.

References

1. Jacobson, H., Bergman, J.P., Hallin, C., Janzén, E., Tuomi, T. and Lendenmann, H., J. Appl. Phys. 95, 1485 (2004).CrossRefGoogle Scholar
2. Jacobson, H., Birch, J., Hallin, C., Henry, A., Yakimova, R., Tuomi, T., Janzén, E. and Lindefelt, U., Appl. Phys. Lett. 82, 3689 (2003).CrossRefGoogle Scholar
3. Zhang, X., Ha, S., Hanlumnyang, Y., Chou, C.H., Rodriguez, V., Skowronski, M., Sumakeris, J.J., Paisley, M.J. and Loughlin, M.J.O., J. Appl. Phys. 101, 053517 (2007).CrossRefGoogle Scholar
4. Ha, S., Chung, H.J., Nuhfer, N.T. and Scowronski, M., J. Cryst. Growth 262, 130 (2004).CrossRefGoogle Scholar
5. Zhang, Z., Stalbush, R.E., Pirouz, P. and Sudarshan, T.S., J. Electr. Mater. 36, 539 (2007).CrossRefGoogle Scholar
6. Zhang, X., Skowronski, M., Liu, K.X., Stahlbush, R.E.,Sumakeris, J.J.,Paisley, M.J. and Loughlin, M.J.O., J. Appl. Phys. 102, 093520(2007).CrossRefGoogle Scholar
7. Tsuchida, H., Miyanagi, T., Kamata, I., Nakamura, T., Izumi, K., Nakayama, K., Ishii, R., Asanoand, K. Sugawara, Y., Mater.Sci.Forum 483-485, 97 (2005).CrossRefGoogle Scholar
8. Kojima, K., Kato, T., Kuroda, S.,Okumura, H. and Arai, K., Mater. Sci. Forum 527-529, 147 (2006).CrossRefGoogle Scholar

Full text views

Full text views reflects PDF downloads, PDFs sent to Google Drive, Dropbox and Kindle and HTML full text views.

Total number of HTML views: 0
Total number of PDF views: 7 *
View data table for this chart

* Views captured on Cambridge Core between September 2016 - 14th April 2021. This data will be updated every 24 hours.

Send article to Kindle

To send this article to your Kindle, first ensure no-reply@cambridge.org is added to your Approved Personal Document E-mail List under your Personal Document Settings on the Manage Your Content and Devices page of your Amazon account. Then enter the ‘name’ part of your Kindle email address below. Find out more about sending to your Kindle. Find out more about sending to your Kindle.

Note you can select to send to either the @free.kindle.com or @kindle.com variations. ‘@free.kindle.com’ emails are free but can only be sent to your device when it is connected to wi-fi. ‘@kindle.com’ emails can be delivered even when you are not connected to wi-fi, but note that service fees apply.

Find out more about the Kindle Personal Document Service.

Influence of Growth Conditions and Substrate Properties on Formation of Interfacial Dislocations and Dislocation Half-loop Arrays in 4H-SiC(0001) and (000-1) Epitaxy
Available formats
×

Send article to Dropbox

To send this article to your Dropbox account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Dropbox.

Influence of Growth Conditions and Substrate Properties on Formation of Interfacial Dislocations and Dislocation Half-loop Arrays in 4H-SiC(0001) and (000-1) Epitaxy
Available formats
×

Send article to Google Drive

To send this article to your Google Drive account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Google Drive.

Influence of Growth Conditions and Substrate Properties on Formation of Interfacial Dislocations and Dislocation Half-loop Arrays in 4H-SiC(0001) and (000-1) Epitaxy
Available formats
×
×

Reply to: Submit a response


Your details


Conflicting interests

Do you have any conflicting interests? *