Hostname: page-component-77c89778f8-vpsfw Total loading time: 0 Render date: 2024-07-23T21:38:15.109Z Has data issue: false hasContentIssue false
  • English
  • Français

Incorporation of fluorine into the n-type (AIxGayIn1−x−y)as System

Published online by Cambridge University Press:  10 February 2011

N. Hayafuji ,
Y. Yamamoto ,
N. Fujii ,
T. Sonoda  and
S. Takamiya
N. Hayafuji
Affiliation:
Optoelectronic & Microwave Devices Lab., Mitsubishi Electric Corp., 4-1, Mizuhara, Itami, Hyogo 664, Japan, hayafuji@oml.melco.co.jp
Y. Yamamoto
Affiliation:
Optoelectronic & Microwave Devices Lab., Mitsubishi Electric Corp., 4-1, Mizuhara, Itami, Hyogo 664, Japan, hayafuji@oml.melco.co.jp
N. Fujii
Affiliation:
Optoelectronic & Microwave Devices Lab., Mitsubishi Electric Corp., 4-1, Mizuhara, Itami, Hyogo 664, Japan, hayafuji@oml.melco.co.jp
T. Sonoda
Affiliation:
Optoelectronic & Microwave Devices Lab., Mitsubishi Electric Corp., 4-1, Mizuhara, Itami, Hyogo 664, Japan, hayafuji@oml.melco.co.jp
S. Takamiya
Affiliation:
Optoelectronic & Microwave Devices Lab., Mitsubishi Electric Corp., 4-1, Mizuhara, Itami, Hyogo 664, Japan, hayafuji@oml.melco.co.jp
Get access

Abstract

In order to elucidate the degradation of the electrical properties of AlInAs/GaInAs high electron mobility transistors during thermal treatment due to the fluorine contamination, the material dependence of this phenomenon has been investigated in AIxGayIn1−x−y As and AlxGayIn1−x−y P systems. The thermal degradation is found to be peculiar to the material containing both of AlAs and InAs, and most serious degradation occurs when the compositional ratio of AlAs to InAs is 1:1. It is also observed that donor-fluorine bonds are formed in the thermally annealed n-type AlInAs layers. The thermal degradation is thought to be due to the fscattering effect of the donorfluorine complex.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 417: Symposium EE – Optoelectronic Materials-Ordering, Composition Modulation, and Self-Assembled … , 1995 , 415
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Yoshida, N., Kitano, T., Yamamoto, Y., Katoh, K., Minami, H., Takano, H., Sonoda, T., Takamiya, S., and Mitsui, S., IEEE, Trans. Microwave Theory Tech., (1994) p. 645.Google Scholar
2. Kamei, H., Hashizume, K., Murata, M., Kuwata, N., Ono, K., and Yoshida, K., J. Crystal Growth, 93 (1988) p. 329.Google Scholar
3. Fujita, S., Noda, T., Wagai, A., Nozaki, C., and Ashizawa, Y., Extended Abstract of the 5th International Conference on Indium Phosphide and Related Materials, paper WC2 (1993) p. 497.Google Scholar
4. Takahashi, N., Ohno, H., Shiota, M., Shimizu, M., Yamamura, I., Sakamoto, Y., Sugino, T., and Shirafuji, J., The 54th Japanese Applied Physics Conference, 29a–2p–10, (1993) p. 1242.Google Scholar
5. Hayafuji, N., Yamamoto, Y., Yoshida, N., Sonoda, T., Takamiya, S., and Mitsui, S., Appl. Phys. Lett., 66 (1995) p. 863.Google Scholar
6. Yamamoto, Y., Hayafuji, N., Fujii, N., Kadoiwa, K., Yoshida, N., Sonoda, T., Takamiya, S., and Mitsui, S., Extended Abstract of the 7th International Conference on Indium Phosphide and Related Materials, paper WP49 (1995) p. 265.Google Scholar
7. Shimada, T., Katayama, Y., and Horigome, S., Jpn. J. Appl. Phys., 19 (1980) p. L265.Google Scholar
8. Fang, C. J., Ley, L., Shanks, H. R., Gruntz, K. J., and Cardona, M., Phys. Rev., B22 (1980) p. 640.Google Scholar
9. Lucovsky, G., Fundamental Physics of Amorphous Semiconductors, edited by Yonezawa, F. (Springer, Berlin, 1981) p. 87.Google Scholar