Skip to main content Accessibility help
×
Home
Hostname: page-component-559fc8cf4f-sbc4w Total loading time: 0.304 Render date: 2021-03-07T06:25:44.685Z Has data issue: true Feature Flags: { "shouldUseShareProductTool": true, "shouldUseHypothesis": true, "isUnsiloEnabled": true, "metricsAbstractViews": false, "figures": false, "newCiteModal": false, "newCitedByModal": true }

In-Based Ohmic Contacts to the Base Layer of GaAs-AlGaAs Heterojunction Bipolar Transistors

Published online by Cambridge University Press:  25 February 2011

F. Ren
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
S. J. Pearton
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
W. S. Hobson
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
T. R. Fullowan
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
A. B. Emerson
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
A. W. Yanof
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
D. M. Schleich
Affiliation:
Polytechnic University, Brooklyn, NY
Get access

Abstract

The use of AuBe-In/Ag/Au p-ohmic contacts for the base layer of GaAs-AIGaAs heterojunction bipolar transistors (HBTs) is described. Annealing at 420°C for 20 sec produces a contact resistivity of 0.095 Ω mm and a specific contact resistance of l.5 × 10-7 Ω cm2, and the surface morphology of the contact is excellent. The role of the silver is as a diffusion barrier to prevent Au spiking into the base layer which could degrade the HBT performance. The presence of the In layer is highly desirable in order to reduce the contact resistance, probably by forming an InGaAs phase at the metal-GaAs interface. Beryllium acts as the p-type dopant, and the top Au layer is used to lower the contact sheet resistance. Current transport through the structure is dominated by tunneling through the barrier due to field emission in the highly doped base layer at p-type doping levels above ∼1019 cm−3

Type
Articles
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below.

References

1. Ishibashi, T. and Yamauchi, Y., “A possible near-ballistic conduction in an AlGaAs/GaAs HBT with a modified collector structure,” IEEE Trans. Electron Devices, 35, 405(1989).Google Scholar
2. Nagata, K., Nakajima, O., Yamauchi, Y., and Ishibashi, , “A new self-aligned structure AlGaAs/GaAs HBT for high speed digital circuits,” GaAs and Related Compounds 1985, Institute of Physics Conf. Ser. 79 589 (1985).Google Scholar
3. Enquist, P. M., Hutchby, J. A., Chang, M. F., Asbeck, P. M., Sheng, N. H., and Higgins, J. A., Electronics Lett. 25, 1124 (1989).Google Scholar
4. Reeves, G. K. and Harrison, H. B., “Obtaining the specific contact resistance from transmission line model measurement,” IEEE Electron Device Lett., vol. EDL–2, 111 (1982).CrossRefGoogle Scholar
5. Berger, H. H., Solid-State Electron. 15, 145 (1972).CrossRefGoogle Scholar
6. Sze, S. M. in “Physics of Semiconductor Devices,” (J. Wiley, NY, 1981), pp. 255311.Google Scholar
7. Rhoderick, S. H. and Williams, R. H. in “Metal-Semiconductor Contacts,” (Clarendon Press, Oxford, 1988).Google Scholar

Full text views

Full text views reflects PDF downloads, PDFs sent to Google Drive, Dropbox and Kindle and HTML full text views.

Total number of HTML views: 0
Total number of PDF views: 3 *
View data table for this chart

* Views captured on Cambridge Core between September 2016 - 7th March 2021. This data will be updated every 24 hours.

Send article to Kindle

To send this article to your Kindle, first ensure no-reply@cambridge.org is added to your Approved Personal Document E-mail List under your Personal Document Settings on the Manage Your Content and Devices page of your Amazon account. Then enter the ‘name’ part of your Kindle email address below. Find out more about sending to your Kindle. Find out more about sending to your Kindle.

Note you can select to send to either the @free.kindle.com or @kindle.com variations. ‘@free.kindle.com’ emails are free but can only be sent to your device when it is connected to wi-fi. ‘@kindle.com’ emails can be delivered even when you are not connected to wi-fi, but note that service fees apply.

Find out more about the Kindle Personal Document Service.

In-Based Ohmic Contacts to the Base Layer of GaAs-AlGaAs Heterojunction Bipolar Transistors
Available formats
×

Send article to Dropbox

To send this article to your Dropbox account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Dropbox.

In-Based Ohmic Contacts to the Base Layer of GaAs-AlGaAs Heterojunction Bipolar Transistors
Available formats
×

Send article to Google Drive

To send this article to your Google Drive account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Google Drive.

In-Based Ohmic Contacts to the Base Layer of GaAs-AlGaAs Heterojunction Bipolar Transistors
Available formats
×
×

Reply to: Submit a response


Your details


Conflicting interests

Do you have any conflicting interests? *