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In Situ Rheed and Hrem Study of Initial Stages of Interfacial Reactions of Uhv Deposited Titanium Thin Films on Silicon

Published online by Cambridge University Press:  16 February 2011

M. H. Wang  and
L. J. Chen
M. H. Wang
Affiliation:
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, Republic of China.
L. J. Chen
Affiliation:
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, Republic of China.
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Abstract

The initial stages of interfacial reactions of ultrahigh vacuum (UHV) deposited Ti thin films on silicon have been studied by in-situ reflected high energy electron diffraction (RHEED) and transmission electron microscopy (TEM).

An amorphous interlayer was found to form during the deposition of the first 1.7-nm-thick Ti layer. In samples annealed at 450 °C for 30–120 min, Ti5Si3, located at the Ti/a-interlayer interface, was identified to be the first nucleated phase. Ti5Si3, Ti5Si4, TiSi and C49-TiSi2 were observed in samples annealed at 475 °C for 30 and 60 min as well as at 500 °C for 10 and 20 min. Fundamental issues in silicide formation are discussed in light of the discovery of the formation of the amorphous interlayer and as many as four different silicide phases in the initial stages of interfacial reactions of UHV deposited Ti thin films on silicon.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 222: Symposium D – Atomic Layer Growth and Processing , 1991 , 345
Copyright
Copyright © Materials Research Society 1991

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References

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