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Impurity Profiles in InP from Ion Implantation at Elevated Temperatures
Published online by Cambridge University Press: 26 February 2011
Abstract
The chemical profiles of Zn, Ge, and Se implanted into InP at elevated temperatures have been measured with secondary ion mass spectrometry and correlated to the implantation damage as deduced from RBS/channeling measurements. An asymmetric broadening of the chemical profiles towards the bulk was found for implantation temperatures above 150°C. This effect is concluded to be due to impurity channeling during implantation.
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- Copyright © Materials Research Society 1992