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Improvement of surface roughness by ultra-thin film deposition with oxygen cluster ion beam assist deposition

Published online by Cambridge University Press:  11 February 2011

Noriaki Toyoda  and
Isao Yamada
Noriaki Toyoda
Affiliation:
Laboratory of Advanced Science and Technology for Industry, Himeji Institute of Technology, 3–1–2 Kouto, Kamigori, Ako, Hyogo, 678–1205, JAPAN.
Isao Yamada
Affiliation:
Laboratory of Advanced Science and Technology for Industry, Himeji Institute of Technology, 3–1–2 Kouto, Kamigori, Ako, Hyogo, 678–1205, JAPAN.
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Abstract

Ta2O5 films were deposited on a rough surface (average roughness 1.3nm, peak-to-valley 14nm) and surface roughness evolutions and improvements by O2 gas cluster ion beam (O2-GCIB) assisted deposition was studied. The average roughness dramatically decreased from 1.3nm to 0.5nm after deposition of Ta2O5 films 20nm in thickness with 7 keV of O2 cluster ion beams. As there was no etching or sputtering of Ta2O5 film by 7keV O2-GCIB irradiations, O2-GCIB assist deposition realized significant improvement of surface roughness by additional deposition of Ta2O5 film whose thickness was close to the peak-to-valley of original surface. It is expected that morphological evolution of the film by GCIB assist deposition becomes completely different from conventional ion assist deposition due to energetic cluster ion impacts.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 749: Symposium W – Morphological and Compositional Evolution of Thin Films , 2002 , W17.7
Copyright
Copyright © Materials Research Society 2003

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References

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