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Improved Optoelectronic Characteristics of Nanocrystalline Porous Silicon by High-Pressure Water Vapor Annealing

Published online by Cambridge University Press:  01 February 2011

Bernard Gelloz ,
Akira Kojima  and
Nobuyoshi Koshida
Bernard Gelloz
Affiliation:
Graduate school of Engineering, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184 8588, Japan.
Akira Kojima
Affiliation:
Graduate school of Engineering, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184 8588, Japan. Quantum14 co. 2–24–16 Nakacho, Koganei, Tokyo 184–8588, Japan.
Nobuyoshi Koshida
Affiliation:
Graduate school of Engineering, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184 8588, Japan. Quantum14 co. 2–24–16 Nakacho, Koganei, Tokyo 184–8588, Japan.
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Abstract

A high-pressure H2O vapor annealing technique has been applied to nanocrystalline porous silicon (PS). The effects on the photoluminescence (PL) are reported here for PS samples of different initial porosities, in different conditions of the annealing pressure. A drastic enhancement of the PL intensity has been achieved, while both the emission band and the peak wavelength remain almost unchanged. The best results have been obtained with an initial PS porosity of about 68 %. The resulting layers consist of Si nanocrystals embedded into an SiO2 tissue. The high external quantum efficiency obtained in treated PS (23%) may be attributed mainly to a very high surface passivation by high quality oxide and an enhancement in the localization of photoexcited carriers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 832: Symposium F – Group IV Semiconductor Nanostructures , 2004 , F7.1
Copyright
Copyright © Materials Research Society 2005

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References

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