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Implanted Bipolar Technology in 4H-SiC

Published online by Cambridge University Press:  15 March 2011

N. G. Wright ,
C. M. Johnson ,
A. G. O'Neill ,
A. Horsfall ,
S. Ortolland ,
K. Adachi ,
A. P. Knights  and
P.G. Coleman
N. G. Wright
Affiliation:
Department of Electrical and Electronic Engineering, University of Newcastle, Newcastle upon Tyne, UK, NE1 7RU U.K. Tel. +44 191 222 7345, Fax. +44 191 222 8180
C. M. Johnson
Affiliation:
Department of Electrical and Electronic Engineering, University of Newcastle, Newcastle upon Tyne, UK, NE1 7RU U.K. Tel. +44 191 222 7345, Fax. +44 191 222 8180
A. G. O'Neill
Affiliation:
Department of Electrical and Electronic Engineering, University of Newcastle, Newcastle upon Tyne, UK, NE1 7RU U.K. Tel. +44 191 222 7345, Fax. +44 191 222 8180
A. Horsfall
Affiliation:
Department of Electrical and Electronic Engineering, University of Newcastle, Newcastle upon Tyne, UK, NE1 7RU U.K. Tel. +44 191 222 7345, Fax. +44 191 222 8180
S. Ortolland
Affiliation:
Department of Electrical and Electronic Engineering, University of Newcastle, Newcastle upon Tyne, UK, NE1 7RU U.K. Tel. +44 191 222 7345, Fax. +44 191 222 8180
K. Adachi
Affiliation:
Department of Electrical and Electronic Engineering, University of Newcastle, Newcastle upon Tyne, UK, NE1 7RU U.K. Tel. +44 191 222 7345, Fax. +44 191 222 8180
A. P. Knights
Affiliation:
School of Electronic Engineering, Information Technology and Mathematics, University of Surrey, Guildford GU2 5XH, United Kingdom.
P.G. Coleman
Affiliation:
Department of Physics, University of Bath, Claverton Down, Bath, BA2 7AY, United Kingdom.
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Abstract

A simple ion-implanted bipolar transistor technology in 4H-SiC is presented. Suitable for both high-voltage vertical devices and lateral high-temperature transistors (for circuit applications), the technology is based on an implanted boron p-well with nitrogen and boron (or aluminium) implanted n+ and p+ regions respectively. The effects of base doping and carrier lifetime on device performance have been studied using TCAD techniques. It is shown that understanding the strong variation of carrier concentration with temperature (due to deep activation levels) and applied field (so-called field ionization) is critical in device design optimisation. The effects of post-implant anneal conditions on the physical and electrical characteristics of the junctions are investigated. It is shown that annealing can remove much of the damage induced by high dose nitrogen implantation but that residual damage is still present. The electrical characteristics of simple BJT transistors with breakdown voltages in excess of 1000V and common-emitter gains of ∼2 is related to the level of such residual damage.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 622: Symposium T – Wide-Bandgap Electronic Devices , 2000 , T1.7.1
Copyright
Copyright © Materials Research Society 2000

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References

REFERENCES

[1] Baliga, BJ, Proc. ISPSD98, Kyoto, Japan, 1998, pp. 5–10.Google Scholar
[2] Agarwal, AK et al. , Diamond and Related Materials, pp. 295–301.Google Scholar
[3] Plmour, J. W., Edmond, J. A., Kong, H. S. and Carter, C. H. Jr., Physica B, 185, pp461–465 (1993).Google Scholar
[4] Baliga, B. J., Modern Power Devices, Wiley and Sons (1987).Google Scholar
[5] MEDICI User manual, 4ed., AVANTI Corp., 1999 Google Scholar
[6] Adachi, K., Johnson, C. M., Ortolland, S., Wright, N.G., O'Neill, A.G., Proceedings of ISCRM'99 (to be published).Google Scholar