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Hysteresis Phenomenon in Sequential Lateral Solidification poly-Si Thin Film Transistor at low temperature (213K)

Published online by Cambridge University Press:  01 February 2011

Sung-Hwan Choi
Affiliation:
cshero@emlab.snu.ac.kr, Seoul National University, School of Electrical Engineering and Computer Science, 599 Gwanak-ro, Gwanak-gu, Seoul, Seoul, 151-742, Korea, Republic of, +82-2-880-7992, +82-2-871-7992
Sang-Geun Park
Affiliation:
psg97@emlab.snu.ac.kr, Seoul National University, School of Electrical Engineering and Computer Sciences, San 56-1, Shillim 9-Dong, Gwanak-gu,, Seoul, 151-742, Korea, Republic of
Won-Kyu Lee
Affiliation:
wklee@emlab.snu.ac.kr, Seoul National University, School of Electrical Engineering and Computer Sciences, San 56-1, Shillim 9-Dong, Gwanak-gu,, Seoul, 151-742, Korea, Republic of
Tae-Jun Ha
Affiliation:
juny@emlab.snu.ac.kr, Seoul National University, School of Electrical Engineering and Computer Sciences, San 56-1, Shillim 9-Dong, Gwanak-gu,, Seoul, 151-742, Korea, Republic of
Min-Koo Han
Affiliation:
mkh@snu.ac.kr, Seoul National University, School of Electrical Engineering and Computer Sciences, San 56-1, Shillim 9-Dong, Gwanak-gu,, Seoul, 151-742, Korea, Republic of
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Abstract

We have investigated temperature dependence on the hysteresis phenomenon of SLS poly-Si TFT on a glass substrate, extremely at low temperature (213K). The p-type sequential lataral solidification (SLS) polycrystalline Silicon (poly-Si) TFT was fabricated on glass substrate. As the temperature was reduced, it was observed that hysteresis phenomenon was increased, whereas the hysteresis was suppressed at high temperature. This could be explained by a difference of initially electron and hole trapped charges into gate insulator is much larger in low temperature than in high temperature. And we have verified that drain current was changed with a different previous gate starting voltage even at same bias condition by experimental results due to the hysteresis phenomenon of SLS poly-Si TFT. Hysteresis of SLS poly-Si TFT should be improved for a pixel element of high quality AMOLED display.

Type
Research Article
Copyright
Copyright © Materials Research Society 2008

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References

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