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Hole properties of a-Si:H and a-Si,Ge:H,F alloys

Published online by Cambridge University Press:  25 February 2011

V. Chu ,
J. Z. Liu ,
J. P. Conde  and
S. Wagner
V. Chu
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544
J. Z. Liu
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544
J. P. Conde
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544
S. Wagner
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544
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Abstract

We present a study of the temperature and intensity dependence of the (μτ)p for Schottky barriers on an a-Si:H and a 1.3eV aSi,Ge:H,F alloy. Measured values for the activation energy of (μτ)p, , and the generation rate exponent of the (μτ)p, φ, show good agreement with calculated values. We also relate the (μτ)p with the mid-gap defect density, Na.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 149: Symposium E – Amorphous Silicon Technology - 1989 , 1989 , 509
Copyright
Copyright © Materials Research Society 1989

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References

REFERENCES

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