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High-Performance Poly-Si TFTs with Multiple Selectively Doped Regions in the Active Layer

Published online by Cambridge University Press:  14 March 2011

Min-Cheol Lee
Affiliation:
School of Electrical Engineering, Seoul National University, Seoul, 151-742, KOREA
Juhn-Suk Yoo
Affiliation:
School of Electrical Engineering, Seoul National University, Seoul, 151-742, KOREA
Kee-Chan Park
Affiliation:
School of Electrical Engineering, Seoul National University, Seoul, 151-742, KOREA
Sang-Hoon Jung
Affiliation:
School of Electrical Engineering, Seoul National University, Seoul, 151-742, KOREA
Min-Koo Han
Affiliation:
School of Electrical Engineering, Seoul National University, Seoul, 151-742, KOREA
Hyun-Jae Kim
Affiliation:
AMLCD division, Samsung Electronics, Kyung-gi Do, KOREA
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Abstract

We have proposed and fabricated a new poly-Si TFT that employs selectively doped regions between the source and drain in order to reduce leakage current without the sacrifice of the on current. In the proposed poly-Si TFTs, the selectively doped regions where doping concentration is identical to that of source/drain, reduce the effective channel length during the on state. Under the off state, the selectively doped regions may reduce the lateral electric field induced in the depletion region near drain so that the leakage current reduces considerably. The experimental data of the proposed TFT shows that it has the high on-current, low leakage current and low threshold voltage when compared with conventional TFT. The fabrication steps for the proposed TFT are reduced because ion-implantation for source/drain and selectively doped regions is performed simultaneously prior to an excimer laser irradiation. It should be noted that, in the proposed TFT, only one excimer laser annealing is required while two excimer laser annealing steps are required in conventional TFT.

Type
Research Article
Copyright
Copyright © Materials Research Society 2000

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References

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[4] Kim, Y.S., Choi, K.Y., Jun, M.C., Han, M.K., Mat. Res. Soc. Symp. Proc. on Flat Panel Display Materials, Vol.345, pp155, 1994 CrossRefGoogle Scholar
[5] Chang, S. C., Lin, G.L., L, I.M. and Huang, W.Y., the proceeding of IDW'99, pp151 Google Scholar

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