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High-Effective Ion-Implanted 6H-SiC Light Emitting Diodes with λmax=535nm

Published online by Cambridge University Press:  25 February 2011

A. V. Suvorov ,
P. A. Ivanov ,
V. N. Makarov ,
D. A. Plotkin  and
A. Ioffe
A. V. Suvorov
Affiliation:
Physical Technical Institute, Politechnicheskaya, 26, 194021 St. Petersburg, Russia
P. A. Ivanov
Affiliation:
Physical Technical Institute, Politechnicheskaya, 26, 194021 St. Petersburg, Russia
V. N. Makarov
Affiliation:
Physical Technical Institute, Politechnicheskaya, 26, 194021 St. Petersburg, Russia
D. A. Plotkin
Affiliation:
Physical Technical Institute, Politechnicheskaya, 26, 194021 St. Petersburg, Russia
A. Ioffe
Affiliation:
Physical Technical Institute, Politechnicheskaya, 26, 194021 St. Petersburg, Russia
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Abstract

The p-n structures was formed by the implantation of Al ions into 6H-SiC n-type films and the thermal annealing. An energy of ions was in the range of 40–90 KeV, an annealing temperature -1700–2100K. We investigated the influence of implantation conditions over the defects electroluminescence of the obtained structures.

After fabricating contacts and mesa-structures with areas 500–500μm our devices showed under the current of 20 mW:

- integral light power 20μW,

- λmax=535 nm, δλmax=80nm.

For the first time was fabricated the green electroluminescence source on SiC with the value of efficiency approximated to one of the A3B5 structures, and after encapsulating it will be possible to obtain LEDs with an integral light power up to 80–100μW.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 279: Symposium A – Beam-Solid Interactions–Fundamentals and Applications , 1992 , 231
Copyright
Copyright © Materials Research Society 1993

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References

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