High Quality P-Type Gan Films Grown By Plasma-Assistedmolecular Beam Epitaxy
Published online by Cambridge University Press: 15 February 2011
p-type GaN films were grown on a (0001) sapphire substrate by the plasma-assisted molecular beam epitaxy. A low-contamination, high-power efficiency inductively coupled radio frequency plasma source was used, which was developed at the University of Illinois. Using an MBE system equipped with this plasma source, high-quality p-type GaN films were grown without post-growth treatment. X-ray rocking curve measurements for (0002) diffraction showed a full width at half maximum of less than 7 arcmin. The highest room-temperature hole concentration obtained was 1.4× 1020 cm−3, and for the same sample, the mobility was 2.5 cm2/Vs It is believed that the Mott-Anderson transition occurred in this sample resulting in a metallictype conductivity in the impurity subband. Low-temperature photoluminescence had a blue emission band and no deep-level transitions, indicating the high quality of the grown films. Uniformity of the Mg doping was confirmed by secondary ion mass spectrometry.
- Research Article
- MRS Online Proceedings Library (OPL) , Volume 423: Symposium E – III-Nitride, SiC, and Diamond Materials for Electronic , 1996 , 385
- Copyright © Materials Research Society 1996