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High Quality P-Type Gan Films Grown By Plasma-Assistedmolecular Beam Epitaxy

Published online by Cambridge University Press:  15 February 2011

J. M. Myoung
Departments of Materials Science and Engineering
C. Kim
K. H. Shim
Departments of Materials Science and Engineering
O. Gluschenkov
Electrical and Computer Engineering
K. Kim
Electrical and Computer Engineering
M. C. Yoo
University of Illinois at Urbana-Champaign, 1406 W. Green St., Urbana, IL 61801 On leave from Samsung Advanced Institute of Technology
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p-type GaN films were grown on a (0001) sapphire substrate by the plasma-assisted molecular beam epitaxy. A low-contamination, high-power efficiency inductively coupled radio frequency plasma source was used, which was developed at the University of Illinois. Using an MBE system equipped with this plasma source, high-quality p-type GaN films were grown without post-growth treatment. X-ray rocking curve measurements for (0002) diffraction showed a full width at half maximum of less than 7 arcmin. The highest room-temperature hole concentration obtained was 1.4× 1020 cm−3, and for the same sample, the mobility was 2.5 cm2/Vs It is believed that the Mott-Anderson transition occurred in this sample resulting in a metallictype conductivity in the impurity subband. Low-temperature photoluminescence had a blue emission band and no deep-level transitions, indicating the high quality of the grown films. Uniformity of the Mg doping was confirmed by secondary ion mass spectrometry.

Research Article
Copyright © Materials Research Society 1996

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