Skip to main content Accessibility help
×
Home
Hostname: page-component-684bc48f8b-plp5r Total loading time: 0.7 Render date: 2021-04-12T00:24:21.336Z Has data issue: true Feature Flags: { "shouldUseShareProductTool": true, "shouldUseHypothesis": true, "isUnsiloEnabled": true, "metricsAbstractViews": false, "figures": false, "newCiteModal": false, "newCitedByModal": true }

High Quality Homoepitaxial Diamond Films Grown in End-Launch Type Reactors

Published online by Cambridge University Press:  10 February 2011

Kazushi Hayashi
Affiliation:
Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba, Ibaraki 305, Japan
Sadanori Yamanaka
Affiliation:
Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba, Ibaraki 305, Japan
Hideyo Okushi
Affiliation:
Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba, Ibaraki 305, Japan
Koji Kajimura
Affiliation:
Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba, Ibaraki 305, Japan
Get access

Abstract

High quality diamond films have been successfully grown, by step-flow, on (001) diamond substrates using an end-launch type chemical vapor deposition reactor. Electrical properties of as-deposited diamond films as well as the surface morphology and the film crystallinity were investigated. Optical and atomic-force microscope images indicated that diamond films consisted of atomically flat terraces and macroscopic steps running parallel to [110×l and 1×2 double-domain structure. The currentvoltage characteristics of Al-Schottky contacts to these step-flow grown diamond films showed excellent rectification properties, indicating the potential of this material for electronic applications.

Type
Research Article
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below.

References

1. Kamo, M., Yurimoto, H., and Sato, Y., Appl. Surf. Sci. 33, 553 (1988).CrossRefGoogle Scholar
2. Tsuno, T., Tomikawa, T., Shikata, S., Imai, T., and Fujimori, N., Appl. Phys. Lett. 64, 572 (1994).CrossRefGoogle Scholar
3. Badzian, A. and Badzian, T., Diamond Related Materials 2, 147 (1993).CrossRefGoogle Scholar
4. Lee, N. and Badzian, A., Appl. Phys. Lett. 66, 2203 (1994).CrossRefGoogle Scholar
5. Wild, C., Kohl, R., Herres, N., Müller-Sebert, W., and Koidl, P., Diamond Related Materials 3, 373 (1994).Google Scholar
6. Enckevort, W. J. P. van, Janssen, G., Vollenberg, W., and Giling, L. J., J. Cryst. Growth 148, 365 (1995).CrossRefGoogle Scholar
7. Vitton, J.-P., Garenne, J.-J., and Truchet, S., Diamond Related Materials 2, 713 (1993).CrossRefGoogle Scholar
8. Enckevort, W. J. P. van, Janssen, G., Vollenberg, W., Schermer, J. J., and Giling, L. J.,Diamond Related Materials 2, 997 (1993).CrossRefGoogle Scholar
9. Plano, L. S., in Diamond: Electronic properties and Applications, edited by Pan, L. S. and Kania, D. R. (Kluwer Academic, Boston, 1995) p. 78.Google Scholar
10. Landstrass, M. I. and Ravi, K. V., Appl. Phys. Lett. 55, 1391 (1989).CrossRefGoogle Scholar
11. Kawarada, H., Aoki, M., Sasaki, H., and Tsugawa, K., Diamond Related Materials 3, 961 (1994).CrossRefGoogle Scholar
12. Hayashi, K., Yamanaka, S., Okushi, H., and Kajimura, K., to be published.Google Scholar
13. Tsuno, T., Imai, T., Nishibayashi, Y., Hamada, K., and Fujimori, N., Jpn. J. Appl. Phys. 30, 1063 (1991).CrossRefGoogle Scholar
14. Rhoderick, E. H. and Williams, R. H., Metal-Semiconductor Contacts, 2nd ed. (Clarendon, Oxford, 1988) p. 113.Google Scholar

Full text views

Full text views reflects PDF downloads, PDFs sent to Google Drive, Dropbox and Kindle and HTML full text views.

Total number of HTML views: 0
Total number of PDF views: 2 *
View data table for this chart

* Views captured on Cambridge Core between September 2016 - 12th April 2021. This data will be updated every 24 hours.

Send article to Kindle

To send this article to your Kindle, first ensure no-reply@cambridge.org is added to your Approved Personal Document E-mail List under your Personal Document Settings on the Manage Your Content and Devices page of your Amazon account. Then enter the ‘name’ part of your Kindle email address below. Find out more about sending to your Kindle. Find out more about sending to your Kindle.

Note you can select to send to either the @free.kindle.com or @kindle.com variations. ‘@free.kindle.com’ emails are free but can only be sent to your device when it is connected to wi-fi. ‘@kindle.com’ emails can be delivered even when you are not connected to wi-fi, but note that service fees apply.

Find out more about the Kindle Personal Document Service.

High Quality Homoepitaxial Diamond Films Grown in End-Launch Type Reactors
Available formats
×

Send article to Dropbox

To send this article to your Dropbox account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Dropbox.

High Quality Homoepitaxial Diamond Films Grown in End-Launch Type Reactors
Available formats
×

Send article to Google Drive

To send this article to your Google Drive account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Google Drive.

High Quality Homoepitaxial Diamond Films Grown in End-Launch Type Reactors
Available formats
×
×

Reply to: Submit a response


Your details


Conflicting interests

Do you have any conflicting interests? *