Hostname: page-component-77c89778f8-fv566 Total loading time: 0 Render date: 2024-07-18T13:44:52.213Z Has data issue: false hasContentIssue false
  • English
  • Français

High Performance 0.5 and 0.25 μm Gate GaAs Mesfet Grown by MOCVD Using Tertiarybutylarsine

Published online by Cambridge University Press:  25 February 2011

V.S. Sundaram ,
B.-Y. Mao ,
S.J. Zurek ,
H.M. Levy ,
G.Y. Lee  and
L.M. Fraas
V.S. Sundaram
Affiliation:
High Technology Center, Boeing Aerospace and Electronics Seattle, Washington : 98124
B.-Y. Mao
Affiliation:
High Technology Center, Boeing Aerospace and Electronics Seattle, Washington : 98124
S.J. Zurek
Affiliation:
High Technology Center, Boeing Aerospace and Electronics Seattle, Washington : 98124
H.M. Levy
Affiliation:
High Technology Center, Boeing Aerospace and Electronics Seattle, Washington : 98124
G.Y. Lee
Affiliation:
High Technology Center, Boeing Aerospace and Electronics Seattle, Washington : 98124
L.M. Fraas
Affiliation:
High Technology Center, Boeing Aerospace and Electronics Seattle, Washington : 98124
Get access

Abstract

Using tertiarybutylarsine and trimethylgallium a GaAs MESFET structure was grown and fabricated into half and quarter micron devices. The typical transconductance and unity current gain frequency (ft) for the half micron device were 360 mS/mm and 24 GHZ respectvely. The corresponding numbers for the quarter micron devices were 510 mS/mm and 55 GHZ respectively.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 204: Symposium E – Chemical Perspectives of Microelectronic Materials II , 1990 , 123
Copyright
Copyright © Materials Research Society 1991

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Stringfellow, G.B., J. Electron. Mater. 17, 327 (1988).Google Scholar
2. Lum, R.M. and Klingert, J.K., J. Cryst. Growth 89, 137 (1988).Google Scholar
3. Chen, C.H., Larsen, C.A. and Stringfellow, G.B., Appl. Phys. Letters 50,21(1987).Google Scholar
4. Sundaram, V.S., Avery, J.E., Girarad, G.R., Hager, H.E., Thompson, A.G. and Fraas, L.M., Mat. Res. Soc. Symp. Proc. 145, 211 (1989).Google Scholar
5. Lum, R.M., Klingert, J.K., Ren, F. and Shaw, N.J., Appl.Phys. Lett. 56, 379 (1990).Google Scholar
6. Hummel, S.G., Beyler, C.A., Zou, Y., Grodzinski, P. and Dapkus, D.P., Appl. Phys. Letters 56, 695 (1990).Google Scholar
7. Miller, B.I., Young, M.G., Oron, M., Koren, U. and Kisker, D., Appl. Phys. Letters 56, 1439 (1990).Google Scholar
8. Haacke, G., Watkins, S.P. and Burkhard, H., Appl. Phys. Letters 56, 478 (1990).Google Scholar
9. Chao, P.C., Smith, P.M., Palmateer, S.C. and Huang, J.C.M., IEEE Trans. Electron Devices, ED32, 1042 (1985).Google Scholar