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High Energy Transmission Electron Diffraction From Surface Monolayers During Silicon Oxidation

Published online by Cambridge University Press:  22 February 2011

Frances M. Ross
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
J. Murray Gibson
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
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Abstract

We have examined the behaviour of the clean Si (111) 7x7 reconstructed surface during exposure to oxygen over a range of temperature and pressure in a UHV transmission electron microscope (TEM). We present preliminary results of our study, discussing both the etching of the silicon surface by oxygen at elevated temperatures and lower oxygen pressures, and its roughening and oxidation at higher oxygen pressures. We achieve great sensitivity to the structure of the surface monolayers by analysing the diffraction of high energy electrons by these surface layers and can resolve the movement of individual monatomic surface steps. Our most dramatic result to date is a demonstation that surface steps do not move during the growth of native oxide.

Type
Research Article
Copyright
Copyright © Materials Research Society 1991

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References

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