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High deposition rate of low resistive and transparent ZnO:Al on glass with an industrial moving belt APCVD reactor

Published online by Cambridge University Press:  20 June 2011

A. Illiberi
Affiliation:
Netherlands Organization for Applied Scientific Research (TNO), PO Box 6235, 5600 HE Eindhoven, The Netherlands
B. Kniknie
Affiliation:
Netherlands Organization for Applied Scientific Research (TNO), PO Box 6235, 5600 HE Eindhoven, The Netherlands
H.L.A.H. Steijvers
Affiliation:
Netherlands Organization for Applied Scientific Research (TNO), PO Box 6235, 5600 HE Eindhoven, The Netherlands
D. Habets
Affiliation:
Netherlands Organization for Applied Scientific Research (TNO), PO Box 6235, 5600 HE Eindhoven, The Netherlands
P.J.P.M. Simons
Affiliation:
Netherlands Organization for Applied Scientific Research (TNO), PO Box 6235, 5600 HE Eindhoven, The Netherlands
E.H.A. Beckers
Affiliation:
Netherlands Organization for Applied Scientific Research (TNO), PO Box 6235, 5600 HE Eindhoven, The Netherlands
J. Van Deelan
Affiliation:
Netherlands Organization for Applied Scientific Research (TNO), PO Box 6235, 5600 HE Eindhoven, The Netherlands
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Abstract

Aluminum doped ZnOx (ZnOx:Al) films have been deposited on glass in an in-line industrialtype reactor by a metalorganic chemical vapor deposition process at atmospheric pressure. ZnOx:Al films can be grown at very high deposition rates of ~ 14 nm/s for a substrate speed from 150 mm/min to 500 mm/min. ZnOx:Al films are highly conductive (R < 9 Ohm/sq, for a film thickness above 1300 nm) and transparent in the visible range (> 80%). Amorphous silicon p-i-n solar cells have been grown on as deposited ZnOx:Al films, without optimizing the surface texturing of ZnOx:Al films to enhance light scattering. An initial efficiency of approximately 8% has been achieved.

Type
Research Article
Copyright
Copyright © Materials Research Society 2011

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High deposition rate of low resistive and transparent ZnO:Al on glass with an industrial moving belt APCVD reactor
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