Skip to main content Accessibility help
×
Home
Hostname: page-component-78dcdb465f-bmnx5 Total loading time: 0.319 Render date: 2021-04-15T00:06:38.741Z Has data issue: true Feature Flags: { "shouldUseShareProductTool": true, "shouldUseHypothesis": true, "isUnsiloEnabled": true, "metricsAbstractViews": false, "figures": false, "newCiteModal": false, "newCitedByModal": true }

High Current Gain Triple Ion Implanted 4H-SiC BJT

Published online by Cambridge University Press:  31 January 2011

Taku Tajima
Affiliation:
taku.tajima.km@gs-eng.hosei.ac.jp, Hosei Univ., Tokyo, Japan
Tadashi Nakamura
Affiliation:
tadashi.nakamura.6g@gs-eng.hosei.ac.jp, Hosei Univ., Tokyo, Japan
Yuki Watabe
Affiliation:
yuki.watabe.no@gs-eng.hosei.ac.jp, Hosei Univ., Tokyo, Japan
Masataka Satoh
Affiliation:
mah@ionbeam.hosei.ac.jp, Hosei Univ., Tokyo, Japan
Tohru Nakamura
Affiliation:
tohru@hosei.ac.jp, Hosei Univ., Tokyo, Japan
Get access

Abstract

We investigated triple ion implanted 4H-SiC BJT with etched extrinsic base regions. To remove the defects induced by ion implantation between emitter and base regions, the characteristics of triple ion implanted 4H-SiC BJT were significantly improved. Maximum common current gain was improved from 1.7 to 7.5.

Type
Research Article
Copyright
Copyright © Materials Research Society 2010

Access options

Get access to the full version of this content by using one of the access options below.

References

[1] Toshiyuki, Ohno, Naoto, Kobayashi, “Structure and distribution of secondary defects in high energy ion implanted 4H-SiC,” J. Appl. Phys., Vol. 89, Jun. 2001, pp. 933941.Google Scholar
[2] Aberg, D., Hallen, A., Pellegrino, P., Svensson, B. G., “Nitrogen deactivation by implantationinduced defects in 4H-SiC epitaxial layers,” Appl. Phys. Lett. Vol. 78, May 2001, pp. 29082910.10.1063/1.1369611CrossRefGoogle Scholar
[3] Tajima, Taku, Uchiumi, Satoshi, Tsukamoto, Kenta, Takenaka, Kazumasa, Satoh, Masataka, Nakamura, Tohru, “Effect of base impurity concentration on DC characteristics of double ion implanted 4H-SiC BJTs,” in Mater. Res. Soc. Proc., Vol 1069, 2008, pp. 269272.10.1557/PROC-1069-D07-20CrossRefGoogle Scholar

Full text views

Full text views reflects PDF downloads, PDFs sent to Google Drive, Dropbox and Kindle and HTML full text views.

Total number of HTML views: 0
Total number of PDF views: 5 *
View data table for this chart

* Views captured on Cambridge Core between September 2016 - 15th April 2021. This data will be updated every 24 hours.

Send article to Kindle

To send this article to your Kindle, first ensure no-reply@cambridge.org is added to your Approved Personal Document E-mail List under your Personal Document Settings on the Manage Your Content and Devices page of your Amazon account. Then enter the ‘name’ part of your Kindle email address below. Find out more about sending to your Kindle. Find out more about sending to your Kindle.

Note you can select to send to either the @free.kindle.com or @kindle.com variations. ‘@free.kindle.com’ emails are free but can only be sent to your device when it is connected to wi-fi. ‘@kindle.com’ emails can be delivered even when you are not connected to wi-fi, but note that service fees apply.

Find out more about the Kindle Personal Document Service.

High Current Gain Triple Ion Implanted 4H-SiC BJT
Available formats
×

Send article to Dropbox

To send this article to your Dropbox account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Dropbox.

High Current Gain Triple Ion Implanted 4H-SiC BJT
Available formats
×

Send article to Google Drive

To send this article to your Google Drive account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Google Drive.

High Current Gain Triple Ion Implanted 4H-SiC BJT
Available formats
×
×

Reply to: Submit a response


Your details


Conflicting interests

Do you have any conflicting interests? *