Hostname: page-component-77c89778f8-rkxrd Total loading time: 0 Render date: 2024-07-18T08:22:53.445Z Has data issue: false hasContentIssue false
  • English
  • Français

Heteroepitaxial Growth of A1203 Thin Films on Si By Lpcvd

Published online by Cambridge University Press:  28 February 2011

M. Ishida ,
I. Katakabe ,
N. Ohtake  and
T. Nakamura
M. Ishida
Affiliation:
Toyohashi University of Technology, Dept. of Electrical & Electronic Engineering Tempaku—cho, Toyohashi 440, Japan
I. Katakabe
Affiliation:
Toyohashi University of Technology, Dept. of Electrical & Electronic Engineering Tempaku—cho, Toyohashi 440, Japan
N. Ohtake
Affiliation:
Toyoko Kagaku Co. Ltd., Nakahara—ku, Kawasaki 211, Japan
T. Nakamura
Affiliation:
Toyohashi University of Technology, Dept. of Electrical & Electronic Engineering Tempaku—cho, Toyohashi 440, Japan
Get access

Abstract

Heteroepitaxial A1203 thin films were grown successfully on Si(lO0) substrates by low—pressure chemical vapor deposition (LP—CVD). The growth was performed at a pressure of 30 Torr by pyrolysis of N2 bubbled AI(CH3)3 and N20 at substrate temperatures above 1000ºC.RHEED patterns indicated that the grown films were ɤ—Al203 single crystals with an orientation relationship of ɤ—Al203(l00)//Si(l00). The ɤ—A1203 films were stable and did not show phase transition after a 1140ºC heat—treatment for 2hr. MOS capacitors with 500—Å—thick A1203 films as a gate insulator showed highfrequency capacitance—voltage (C—V) curves without hysteresis. The A1203 interface state density determined from quasi—static C—V measurements was 1.7 X 1011cm-2eV-1. It can be seen that ɤ—Al203 film is a promising new insulator for Si on Insulator (SOI) structures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 116 , 1988 , 375
Copyright
Copyright © Materials Research Society 1988

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Ishiwara, Hiroshi and Asano, Tanemasa, Appl. Phys. Lett. 40, 66 (1982).CrossRefGoogle Scholar
[2] Ihara, M., Arimoto, Y., Jifuku, M., Kimura, T., Kodama, S., Yamawaki, H., and Yamaoka, T., J. Electrochem. Soc. 129, 2569 (1982).Google Scholar
[3] Golecki, I., Manasevit, H. M., Moudy, L. A., Yang, J. J., and Mee, J. E., Appl. Phys. Lett. 42, 501 (1983).Google Scholar
[4] Kado, Yuichi and Arita, Yoshinobu, J. Appl. Phys. 61, 2398 (1987).CrossRefGoogle Scholar
[5] Ishida, M., Ohyama, H., Sasaki, S., Yasuda, Y., Nishinaga, T., and nakamura, T., Jpn. J. Appl. Phys. 20. L541 (1981).CrossRefGoogle Scholar
[6] Ishida, M., Yasuda, Y., Wakamatsu, H., Abe, H., Nishinaga, T., and Nakamura, T., Jpn. J. Appl. Phys. 22, L438 (1983).CrossRefGoogle Scholar
[7] Ishida, M., yasuda, Y., Ohyama, H., Wakamatsu, H., Abe, H., and Nakamura, T., J. Appl. Phys. 59, 4073 (1986).Google Scholar
[8] Ishida, M., Katakabe, I., Ohtake, N., and Nakamura, T., Appl. Phys. Lett. Apr.18 (1988).Google Scholar
[9] Wyckoff, Ralph W. G., Crystal Structures, 2nd ed. (Interscience, New York, 1965), Vol.3, p.84.Google Scholar