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Heteroepitaxial Diamond Formed on Silicon Wafer Observed by High Resolution Electron Microscopy

Published online by Cambridge University Press:  15 February 2011

Jie Yang
Affiliation:
The State Key Lab. of Surface Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100080, People's Republic of, China CCAST(World Laboratory)
Zhangda Lin
Affiliation:
The State Key Lab. of Surface Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100080, People's Republic of, China
Li-Xin Wang
Affiliation:
Beijing Laboratory of Electron Microscopy, Chinese Academy of Sciences, Beijing, 100080, People's Republic of, China
Sing Jin
Affiliation:
Beijing Laboratory of Electron Microscopy, Chinese Academy of Sciences, Beijing, 100080, People's Republic of, China
Ze Zhang
Affiliation:
Beijing Laboratory of Electron Microscopy, Chinese Academy of Sciences, Beijing, 100080, People's Republic of, China
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Abstract

Diamond films with high preferential orientation (111) on silicon (100) crystalline orientation substrates had been obtained by hot-filament chemical vapor deposition (HFCVD) method. X-ray diffraction (XRD), scanning electron microscopy (SEM), Raman spectroscopy, and high-resolution cross-sectional transmission electron microscopy (HREM) are used to characterizate the structure and morphology of the synthesised diamond films. Diamond (111) plans had been local grown epitaxially on the Si(100) substrate observed by HREM. SEM photographes show that plane diamond crystals have been obtained.

Type
Research Article
Copyright
Copyright © Materials Research Society 1995

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