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Growth of Thin Epitaxial CoSi2 Layers on Si(100)

Published online by Cambridge University Press:  28 February 2011

S. M. Yalisove ,
R. T. Tung  and
J. L. Batstone
S. M. Yalisove
Affiliation:
At&t Bell Laboratories, Murray Hill, N. J. 07974
R. T. Tung
Affiliation:
At&t Bell Laboratories, Murray Hill, N. J. 07974
J. L. Batstone
Affiliation:
At&t Bell Laboratories, Murray Hill, N. J. 07974
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Abstract

The growth of high quality, thin (14-70 Å) epitaxial CoSi2 layers on Si(100) substrates have been observed. Three types of films have been grown on the Si(100) substrate; pure CoSi2(100), pure CoSi2(110), and mixed CoSi2(100)+CoSi2(110). The CoSi2(110) can exist in two 90º rotated variants on the Si(100) surface and these are observed. Methods to isolate the epitaxial orientations are described. Results from in-situ LEED and AES as well as ex-situ RBS and plan view TEM are presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 116 , 1988 , 439
Copyright
Copyright © Materials Research Society 1988

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